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Dec.
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T. Ohguro, H. Xaruse, H. Sugaya, H. Kiinijma, E. Morifuji, T. Yoshitomi, T. Morimoto, H. S. Momobe, Y. Katsumaia, and H. Iwai, ''0.12 μm raided gate/source/drain epitaxial channel NMOS technology," in Proc. hit Electron Dei ices Meeting. Dec. 1998, p. 927.
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(1998)
Proc. Hit Electron Dei Ices Meeting
, pp. 927
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Ohguro, T.1
Xaruse, H.2
Sugaya, H.3
Kiinijma, H.4
Morifuji, E.5
Yoshitomi, T.6
Morimoto, T.7
Momobe, H.S.8
Katsumaia, Y.9
Iwai, H.10
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