Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 190-197

  Toriumi, A ^a,c   Iwamoto, K ^b   Ota, H ^a   Kadoshima, M ^b   Mizubayashi, W ^a   Nabatame, T ^b   Ogawa, A ^b   Tominaga, K ^b   Horikawa, T ^a   Satake, H ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Fermi level pinning; HfAlOx; High k; Layer by layer deposition and annealing; Mobility

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONCENTRATION (PROCESS); ELECTRON MOBILITY; FERMI LEVEL; FILM GROWTH; HAFNIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; THICKNESS MEASUREMENT;

FERMI-LEVEL PINNING; HFALONX; HIGH-K; LAYER-BY-LAYER DEPOSITION AND ANNEALING; MOBILITY;

DIELECTRIC FILMS;

EID: 19944423448     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.067     Document Type: Conference Paper

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