GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

Applied Physics Letters

Volumn 87, Issue 23, 2005, Pages 1-3

  Niu, Z C ^a   Zhang, S Y ^a   Ni, H Q ^a   Wu, D H ^a   Zhao, H ^a   Peng, H L ^a   Xu, Y Q ^a   Li, S Y ^a   He, Z H ^a   Ren, Z W ^a   Han, Q ^a   Yang, X H ^a   Du, Y ^a   Wu, R H ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; DENSITY (OPTICAL); DIODES; EPITAXIAL GROWTH; MOLECULES; PHOTOLUMINESCENCE; THRESHOLD ELEMENTS;

GAINNASSB; PHOTOLUMINESCENCE; ROOM-TEMPERATURE; SINGLE-QUANTUM-WELL LASER; SINGLE-QUANTUM-WELL LASER DIODE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 28444474778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2140614     Document Type: Article

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