High-κ/metal-gate stack and its MOSFET characteristics

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 408-410

  Chau, Robert ^a   Datta, Suman ^a   Doczy, Mark ^a   Doyle, Brian ^a   Kavalieros, Jack ^a   Metz, Matthew ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Atomic layer deposition (ALD); CMOS transistors; Hafnium Oxide (HfO2); High dielectric; Metal gate electrode; Remote phonons

Indexed keywords

CARRIER MOBILITY; DIELECTRIC MATERIALS; ELECTRON SCATTERING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PHONONS;

ATOMIC LAYER DEPOSITION; HAFNIUM OXIDE; METAL GATE ELECTRODE; SURFACE PHONON SCATTERING;

MOSFET DEVICES;

EID: 2942702306     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.828570     Document Type: Letter

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