Heteroepitaxial growth of high-k gate oxides on silicon: Insights from first-principles calculations on Zr on Si(0 0 1)

Computational Materials Science

Volumn 27, Issue 1-2, 2003, Pages 70-74

  Först, Clemens J ^a,b   Blöchl, Peter E ^a   Schwarz, Karlheinz ^b  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

DFT; Heteroepitaxial growth; High k oxides; Si(1 0 0); Zr

Indexed keywords

DEPOSITION; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); MORPHOLOGY; SILICON; ZIRCONIUM;

HETEROEPITAXIAL GROWTH;

EPITAXIAL GROWTH;

EID: 0037373445     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0256(02)00427-5     Document Type: Conference Paper

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