Physical and electrical analysis of Rux Yy alloys for gate electrode applications

Applied Physics Letters

Volumn 86, Issue 5, 2005, Pages 1-3

  Chen, Bei ^a,b   Suh, Youseok ^a,b   Lee, Jaehoon ^a,b   Gurganus, Jason ^a,b   Misra, Veena ^a,b   Cabral, Cyril ^b  

^a North Carolina State University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; METAL-OXIDE-SEMICONNDUCTOR;

CAPACITANCE; ELECTRIC POTENTIAL; FUNCTIONS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION; YTTRIUM ALLOYS;

ELECTRODES;

EID: 18644373877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1857093     Document Type: Article

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