Germanium MOS capacitors incorporating ultrathin high-κ gate dielectric

IEEE Electron Device Letters

Volumn 23, Issue 8, 2002, Pages 473-475

  Chui, Chi On ^a,b   Ramanathan, Shriram ^b   Triplett, Baylor B ^a,b   McIntyre, Paul C ^b   Saraswat, Krishna C ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

Germanium; High permittivity dielectric; MOS devices; Surface passivation; Zirconium oxide

Indexed keywords

GAS ANNEALING;

ANNEALING; CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; HYSTERESIS; PASSIVATION; PERMITTIVITY; SEMICONDUCTING GERMANIUM; SUBSTRATES; THERMOANALYSIS; ZIRCONIA;

MOS CAPACITORS;

EID: 0036687234     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.801319     Document Type: Article

References (16)

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