Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

Applied Physics Letters

Volumn 86, Issue 20, 2005, Pages 1-3

  Sivasubramani, P ^a   Kim, M J ^a   Gnade, B E ^a   Wallace, R M ^a   Edge, L F ^b   Schlom, D G ^b   Craft, H S ^c   Maria, J P ^c  

^a UNIVERSITY OF TEXAS AT DALLAS   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK SIDE POLISHING APPROACH; BAND GAPS; OPTICAL PYROMETRY; PERIODIC TABLE;

ALUMINUM; ATOMIC FORCE MICROSCOPY; MOSFET DEVICES; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

LANTHANUM COMPOUNDS;

EID: 20944439392     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1928316     Document Type: Article

References (24)

1. International Technology Roadmap for Semiconductors (ITRS) 2003, Front End Processes. (Semiconductor Industry Association, San Jose, CA, 2003), p. 33, Fig. 46 (2003). http://public.itrs.net/.
2. R. M. Wallace and G. Wilk, Crit. Rev. Solid State Mater. Sci. 28, 231 (2003).
3. B.-E. Park and H. Ishiwara, Appl. Phys. Lett. 79, 806 (2001).
4. K. J. Hubbard and D. G. Schlom, J. Mater. Res. 11, 2757 (1996).
5. S.-G. Lim, S. Kriventsov, T. N. Jackson, J. H. Haeni, D. G. Schlom, A. M. Balbashov, R. Uecker, P. Reiche, J. L. Freeouf, and G. Lucovsky, J. Appl. Phys. 91, 4500 (2002).
6. P. W. Peacock and J. Robertson, J. Appl. Phys. 92, 4712 (2002).
7. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 726 (2004).
8. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, M. J. Bevan, and L. Colombo, Appl. Phys. Lett. 79, 2958 (2001).
9. H. Bracht, Mater. Res. Bull. 25, 22 (2000).
10. S. Guha, E. P. Gusev, H. O-Schmidt, M. Copel, L.-Å Ragnarsson, N. A. Bojarczuk, and P. Ronsheim, Appl. Phys. Lett. 81, 2956 (2002).
11. The nominal film thicknesses given were calculated from the fluxes of the molecular beams smeasured by a quartz crystal microbalanced assuming the amorphous LaAlO3 films had the density of crystalline LaAlO3. The areal density satoms/cm2d of La and Al in the films was confirmed by RBS.
12. J. Lettieri, J. H. Haeni, and D. G. Schlom, J. Vac. Sci. Technol. A 20, 1332 (2002).
13. L. F. Edge, D. G. Schlom, R. T. Brewer, Y. J. Chabal, J. R. Williams, S. A. Chambers, C. Hinkle, G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, and J. Schubert, Appl. Phys. Lett. 84, 4629 (2004).
14. Evans Texas, Roundrock, Texas: www.eaglabs.com.
15. C. Gu, R. Garcia, A. Pivovarov, F. Stevie, and D. Griffis, Appl. Surf. Sci. 231, 663 (2004).
16. L. F. Edge, V. Vaithyanathan, D. G. Schlom, R. T. Brewer, Y. J. Chabal, Y. Yang, S. Stemmer, H. S. Craft, J.-P. Maria, M. E. Hawley, B. Holländer, J. Schubert, and K. Eisenbeiser (unpublished).
17. M. Nieminen, T. Sajavaara, E. Rauhala, M. Putkonen and L. Niinistö, J. Mater. Chem. 11, 2340 (2001).
18. V. Sandu, J. Jaklovszky, D. Miu, D. Drǎgulinescu, C. Grigoriu, and M. C. Bunescu, J. Mater. Sci. Lett. 13, 1222 (1994).
19. M. V. Cabañas, C. V. Ragel, F. Conde, J. M. González-Calbet, and M. Vallet-Regí, Solid State Ionics 101, 191 (1997).
20. T. Gougousi, M. J. Kelly, D. B. Terry, and G. N. Parsons, J. Appl. Phys. 93, 1691 (2003).
21. H. Yamada, T. Shimizu, and E. Suzuki, Jpn. J. Appl. Phys., Part 2 41, L368 (2002).
22. M. Copel, E. Cartier, and F. M. Ross, Appl. Phys. Lett. 78, 1607 (2001).
23. T. Busani and R. A. B. Devine, Fundamentals of Novel Oxide/Semiconductor Interfaces, edited by C. R. Abernathy, E. Gusev, D. G. Schlom, and S. Stemmer (MRS, Pittsburgh, 2004), Vol. 786, p. E.6.12.1
24. L. Miotti, K. P. Bastos, C. Driemeier, I. J. Baumvol, M.-C. Hugon, and B. Agius (unpublished).