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Volumn 81, Issue 19, 2002, Pages 3549-3551

High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; EPITAXIAL QUALITY; GATE REPLACEMENT; IN-PLANE ALIGNMENT; LOW DEGREE; MOSAICITY; SHARP INTERFACE; SI(0 0 1); SI(001) SURFACES; SILICON SURFACES; SINGLE-CRYSTALLINE;

EID: 79956017007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1519727     Document Type: Article
Times cited : (43)

References (12)
  • 9
    • 79958231981 scopus 로고    scopus 로고
    • G. Vellianitis, G. Apostolopoulos, A. Dimoulas, M. Alexe, R. Scholz, and J. Hooker (unpublished)
    • G. Vellianitis, G. Apostolopoulos, A. Dimoulas, M. Alexe, R. Scholz, and J. Hooker (unpublished).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.