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Volumn 81, Issue 19, 2002, Pages 3549-3551
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High epitaxial quality Y2O3 high-κ dielectric on vicinal Si(001) surfaces
a a a b b c c c
c
LABORATORIO MDM
(Italy)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL QUALITIES;
EPITAXIAL QUALITY;
GATE REPLACEMENT;
IN-PLANE ALIGNMENT;
LOW DEGREE;
MOSAICITY;
SHARP INTERFACE;
SI(0 0 1);
SI(001) SURFACES;
SILICON SURFACES;
SINGLE-CRYSTALLINE;
DIMERS;
EPITAXIAL FILMS;
EPITAXIAL GROWTH;
SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 79956017007
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1519727 Document Type: Article |
Times cited : (43)
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References (12)
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