The interface between single crystalline (001) LaAlO3 and (001) silicon

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 20-23, 2005, Pages

  Klenov, Dmitri O ^a   Schlom, Darrell G ^b   Li, Hao ^c   Stemmer, Susanne ^a  

^a University of California   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c MOTOROLA INC   (United States)

Author keywords

High angle annular dark field imaging; High k gate dielectrics; Oxide semiconductor interfaces; Scanning trans mission electron microscopy

Indexed keywords

BONDING; DIELECTRIC MATERIALS; IMAGING TECHNIQUES; LANTHANUM COMPOUNDS; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH-ANGLE ANNULAR DARK-FIELD IMAGING; HIGH-K GATE DIELECTRICS; OXIDE/SEMICONDUCTOR INTERFACES; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

SINGLE CRYSTALS;

EID: 23944517733     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.L617     Document Type: Article

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