Point defects in HfO2 high K gate oxide

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 408-411

  Xiong, K ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Defects; HfO2; Trapping

Indexed keywords

APPROXIMATION THEORY; CMOS INTEGRATED CIRCUITS; COMPUTATIONAL METHODS; DEFECTS; ELECTRIC CONDUCTANCE; ELECTRON ENERGY LEVELS; LEAKAGE CURRENTS; PARAMAGNETIC RESONANCE;

BAND GAP; HFO2; OXYGEN VACANCY; TRAPPING;

HAFNIUM COMPOUNDS;

EID: 19944415293     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.098     Document Type: Conference Paper

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