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Journal of Materials Science

Volumn 40, Issue 9-10, 2005, Pages 2693-2695

Properties of Ta-Mo alloy gate electrode for n-MOSFET

(6) Lee, Chung Keun a Kim, Jae Young a Hong, Shin Nam a Zhong, Huicai b Chen, Bei c Misra, Veena c

a Hankuk Aviation University (South Korea)

b ADVANCED MICRO DEVICES (United States)

c North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC PROPERTIES; GATES (TRANSISTOR); MOSFET DEVICES; PHYSICAL VAPOR DEPOSITION; POLYSILICON; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC PROPERTIES; THERMODYNAMIC STABILITY; THIN FILMS; ULTRAHIGH VACUUM; VOLTAGE MEASUREMENT;

ATOMIC COMPOSITION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY (FE-SEM); GATE ELECTRODES; OXIDE THICKNESS;

TANTALUM ALLOYS;

EID: 21144447906 PISSN: 00222461 EISSN: None Source Type: Journal
DOI: 10.1007/s10853-005-2108-3 Document Type: Conference Paper

Times cited : (14)

References (10)

1
- 0141649587
- C. HOBBS, L. FONSECA, V. DHANDAPANI, S. SAMAVEDAM, B. TAYLOR, J. GRANT, L. DIP, D. TRIYOSO, R. HEGDE, D. GILMER, R. GARCIA, D. ROAN, L. LOVEJOY, R. RAI, L. HEBERT, H. TSENG, B. WHITE and T. TOBIN, Symp. of VLSI Technol. (2003) 9.
- (2003) Symp. of VLSI Technol. , pp. 9
- Hobbs, C.¹ Fonseca, L.² Dhandapani, V.³ Samavedam, S.⁴ Taylor, B.⁵ Grant, J.⁶ Dip, L.⁷ Triyoso, D.⁸ Hegde, R.⁹ Gilmer, D.¹⁰ Garcia, R.¹¹ Roan, D.¹² Lovejoy, L.¹³ Rai, R.¹⁴ Hebert, L.¹⁵ Tseng, H.¹⁶ White, B.¹⁷ Tobin, T.¹⁸

2
- 0031122158
- Y. TAUR, D. A. BUCHANAN, W. CHEN, D. J. FRANK, K. E. ISMAIL, S. H. LO, G. A. SAI-HALASZ, R. G. VISWANATHAN, H. J. C. WANN, S. J. WIND and H. S. WONG, Proc. IEEE 85 (1997) 486.
- (1997) Proc. IEEE , vol.85 , pp. 486
- Taur, Y.¹ Buchanan, D.A.² Chen, W.³ Frank, D.J.⁴ Ismail, K.E.⁵ Lo, S.H.⁶ Sai-Halasz, G.A.⁷ Viswanathan, R.G.⁸ Wann, H.J.C.⁹ Wind, S.J.¹⁰ Wong, H.S.¹¹

3
- 21144439745
- Semiconductor Industry Association, 2000 update
- Semiconductor Industry Association, 2000 update.

4
- 0033745206
- I. DE, D. JOHRI, A. SRIVASTAVA and C. M. OSBURN, Solid State Electron. 44 (2000) 1077.
- (2000) Solid State Electron. , vol.44 , pp. 1077
- De, I.¹ Johri, D.² Srivastava, A.³ Osburn, C.M.⁴

5
- 0032655915
- B. CHENG, M. CAO, R. RAO, A. INANI, P. V. VOORDE, W. M. GREEN, J. M. C. STOCK, Z. YU, P. M. ZEITZOFF and J. C. S. WOO, IEEE Trans. Electron. Devices. 46 (1999) 1537.
- (1999) IEEE Trans. Electron. Devices. , vol.46 , pp. 1537
- Cheng, B.¹ Cao, M.² Rao, R.³ Inani, A.⁴ Voorde, P.V.⁵ Green, W.M.⁶ Stock, J.M.C.⁷ Yu, Z.⁸ Zeitzoff, P.M.⁹ Woo, J.C.S.¹⁰

6
- 0000677814
- H. ZHONG, GREG HEUSS and V. MISRA. Appl. Phys. Lett. 78 (2001) 1134.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1134
- Zhong, H.¹ Heuss, G.² Misra, V.³

7
- 0035948001
- V. MISRA, G. P. HEUSS and H. ZHONG, ibid. 78 (2001) 4166.
- (2001) Appl. Phys. Lett. , vol.78 , pp. 4166
- Misra, V.¹ Heuss, G.P.² Zhong, H.³

8
- 0347227352
- J. R. HAUSER and K. AHMED, Nat. Inst. Stand. Technol. (1998).
- (1998) Nat. Inst. Stand. Technol.
- Hauser, J.R.¹ Ahmed, K.²

9
- 21144452400
- J. E. SUAREZ, B. E. JOHNSON and B. EL-KARCH, IEEE Trans. Comon. Hybrids Manuf. Technol. 15 (1992) 537.
- (1992) IEEE Trans. Comon. Hybrids Manuf. Technol. , vol.15 , pp. 537
- Suarez, J.E.¹ Johnson, B.E.² El-Karch, B.³

10
- 0030402063
- T. USHIKI, M. C. YU, Y. HIRANO, H. SHIMADA, M. MORITA and T. OHMI, IEDM (1996) 117.
- (1996) IEDM , pp. 117
- Ushiki, T.¹ Yu, M.C.² Hirano, Y.³ Shimada, H.⁴ Morita, M.⁵ Ohmi, T.⁶

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