The interface between silicon and a high-k oxide

Nature

Volumn 427, Issue 6969, 2004, Pages 53-56

  Först, Clemens J ^a,b   Ashman, Christopher R ^a   Schwarz, Karlheinz ^b   Blöchl, Peter E ^a  

^a CLAUSTHAL UNIVERSITY OF TECHNOLOGY   (Germany)

^b VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROELECTRONICS; PERMITTIVITY; QUANTUM THEORY; SILICA;

TUNNELLING CURRENTS;

SILICON;

OXIDE; SILICON; SILICON DIOXIDE; STRONTIUM; TITANIUM DERIVATIVE;

SEMICONDUCTOR INDUSTRY;

ARTICLE; ATOM; CRYSTAL STRUCTURE; DIELECTRIC CONSTANT; ELECTRON; ELECTRONICS; FILM; PRIORITY JOURNAL; QUANTUM MECHANICS; SEMICONDUCTOR; THICKNESS;

EID: 0346458533     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02204     Document Type: Article

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