Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2004, Pages 733-736

  Shen, C ^a,b   Li, M F ^a,b   Wang, X P ^a   Yu, H Y ^a   Feng, Y P ^a   Lim, A T L ^a   Yeo, Y C ^a   Chan, D S H ^a   Kwong, D L ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY DEPENDENCE; GATE DIELECTRICS; LATTICE RELAXATION; STRESS VOLTAGE; CHARGE TRAPPING CHARACTERISTICS; CHARGE-TRAPPING; DYNAMIC STRESS; FIRST PRINCIPLE CALCULATIONS; FREQUENCIES DEPENDENCE; HFO2 GATE DIELECTRICS; MOSFETS; NEGATIVE-U; PROPERTY; ULTRA-FAST;

CRYSTAL LATTICES; ELECTRIC LINES; ELECTRON TRAPS; FREQUENCIES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HOLE MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; MOSFET DEVICES; OXYGEN VACANCIES;

MOSFET DEVICES; CHARGE TRAPPING;

EID: 20444480929     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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