Trends in semiconductor defect engineering at the nanoscale

Materials Science and Engineering R: Reports

Volumn 70, Issue 3-6, 2010, Pages 151-168

  Seebauer, Edmund G ^a   Noh, Kyong Wook ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Defect engineering; Defects; Metal oxides; Nanoelectronics; Semiconductors

Indexed keywords

CONTROL MATERIALS; CRYSTALLINE SOLIDS; DEFECT ENGINEERING; LENGTH SCALE; LOW ENERGIES; METAL OXIDES; NANO SCALE; OXIDE SEMICONDUCTOR; PHOTOSTIMULATION; PHYSICAL MECHANISM; PROSPECTIVE APPLICATIONS; REACTION NETWORK; RECENT TRENDS; SEMICONDUCTORS; SI-BASED; SPATIAL DISTRIBUTION;

ENGINEERING; ION BOMBARDMENT; MICROELECTRONICS; NANOELECTRONICS; PARAMETER ESTIMATION; PHOTOCATALYSIS; SEMICONDUCTING SILICON COMPOUNDS; SURFACE CHEMISTRY;

DEFECTS;

EID: 78649326395     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2010.06.007     Document Type: Conference Paper

References (266)

1. H. Bracht MRS Bull. 25 2000 22 27
2. N. Dasgupta, and A. Dasgupta Semiconductor Devices: Modeling and Technology 2004 Prentice-Hall New Delhi
3. P.M. Fahey, P.B. Griffin, and J.D. Plummer Rev. Mod. Phys. 61 1989 289 384
4. S.M. Hu Mater. Sci. Eng. R 13 1994 105 192
5. M.Y.L. Jung, C.T.M. Kwok, R.D. Braatz, and E.G. Seebauer J. Appl. Phys. 97 2005 063520
6. J.W. Fergus J. Mater. Sci. 38 2003 4259 4270
7. W. Baiqi, J. Liqiang, Q. Yichun, L. Shudan, J. Baojiang, Y. Libin, X. Baifu, and F. Honggang Appl. Surf. Sci. 252 2006 2817 2825
8. Y. Zhang, A. Kolmakov, S. Chretien, H. Metiu, and M. Moskovits Nano Lett. 4 2004 403 407
9. W.W. Chow, and S.W. Koch Semiconductor-Laser Fundamentals: Physics of the Gain Materials 1999 Springer Berlin
10. S. Guha, J.M. Depuydt, M.A. Haase, J. Qiu, and H. Cheng Appl. Phys. Lett. 63 1993 3107 3109
11. G. Lutz Semiconductor Radiation Detectors: Device Physics 1999 Springer Berlin
12. S.R. Kurtz, A.A. Allerman, E.D. Jones, J.M. Gee, J.J. Banas, and B.E. Hammons Appl. Phys. Lett. 74 1999 729 731
13. S.A. Campbell The Science and Engineering of Microelectronic Fabrication 2001 Oxford University Press New York
14. R. Doering, and Y. Nishi Handbook of Semiconductor Manufacturing Technology 2008 CRC Press Boca Raton
15. P. Siffert, and E.F. Krimmel Silicon: Evolution and Future of a Technology 2004 Springer Berlin
16. E.C. Jones, and E. Ishida Mater. Sci. Eng. R 24 1998 1 80
17. B. Colombeau, S.H. Yeong, D.X.M. Tan, A.J. Smith, R.M. Gwilliam, C.M. Ng, K.R.C. Mok, F. Benistant, and L. Chan Proceedings of the 17th International Conference on Ion Implantation Technology AIP, Monterey, CA 2008 11 18
18. H.J.L. Gossmann J. Vac. Sci. Technol. B 26 2008 267 272
19. G. Müller Cryst. Res. Technol. 42 2007 1150 1161
20. T. Sinno, E. Dornberger, W. von Ammon, R.A. Brown, and F. Dupret Mater. Sci. Eng. R 28 2000 149 198
21. J. Vanhellemont, J. Van Steenbergen, F. Holsteyns, P. Roussel, M. Meuris, K. Młynarczyk, P. Śpiewak, W. Geens, and I. Romandic J. Mater. Sci.: Mater. Electron. 19 2008 24 31
22. E. Chason, S.T. Picraux, J.M. Poate, J.O. Borland, M.I. Current, T.D. delaRubia, D.J. Eaglesham, O.W. Holland, M.E. Law, C.W. Magee, J.W. Mayer, J. Melngailis, and A.F. Tasch J. Appl. Phys. 81 1997 6513 6561
23. A. Claverie, B. Colombeau, B. De Mauduit, C. Bonafos, X. Hebras, G. Ben Assayag, and F. Cristiano Appl. Phys. A 76 2003 1025 1033
24. L. Pelaz, L.A. Marques, M. Aboy, P. Lopez, and J. Barbolla Comput. Mater. Sci. 33 2005 92 105
25. L. Shao, J.R. Liu, Q.Y. Chen, and W.K. Chu Mater. Sci. Eng. R 42 2003 65 114
26. P.K. Chu Plasma Phys. Control. Fusion 45 2003 555 570
27. J. Pelletier, and A. Anders IEEE Trans. Plasma Sci. 33 2005 1944 1959
28. S. Walther, and R. Liebert J. Vac. Sci. Technol. B 24 2006 482 488
29. N.E.B. Cowern, A.J. Smith, N. Bennett, B.J. Sealy, R. Gwilliam, R.P. Webb, B. Colombeau, S. Paul, W. Lerch, and A. Pakfar Mater. Sci. Forum 573-574 2008 295 304
30. R.M. Gwilliam, N.E.B. Cowern, B. Colombeau, B. Sealy, and A.J. Smith AIP Conf. Proc. 876 2006 181 190
31. A. Bratschun J. Electron. Mater. 28 1999 1328 1332
32. J. Nakos, and J. Shepard Mater. Sci. Forum 573-574 2008 3 19
33. S. Paul, and W. Lerch Mater. Sci. Forum 573-574 2008 207 228
34. J. Foggiato, and W.S. Yoo Mater. Sci. Eng. B 124 2005 219 222
35. W. Skorupa, R.A. Yankov, M. Voelskow, W. Anwand, D. Panknin, R.A. McMahon, M. Smith, T. Gebel, L. Rebohle, R. Fendler, and W. Hentsch RTP 2005 - 13th IEEE International Conference on Advanced Thermal Processing of Semiconductors IEEE, Santa Barbara, CA 2005 53 71
36. S.O. Kucheyev, J.S. Williams, and C. Jagadish Vacuum 73 2004 93 104
37. C. Ronning, E.P. Carlson, and R.F. Davis Phys. Rep. 351 2001 349 385
38. W. Wesch Nucl. Instrum. Methods Phys. Res. B 68 1992 342 354
39. M. Anpo, S. Dohshi, M. Kitano, Y. Hu, M. Takeuchi, and M. Matsuoka Annu. Rev. Mater. Res. 35 2005 1 27
40. M. Ni, M.K.H. Leung, D.Y.C. Leung, and K. Sumathy Renew. Sust. Energ. Rev. 11 2007 401 425
41. M.K. Nowotny, L.R. Sheppard, T. Bak, and J. Nowotny J. Phys. Chem. C 112 2008 5275 5300
42. C.G. Van de Walle Physica B 308 2001 899 903
43. S.P. Wilks J. Phys. D: Appl. Phys. 35 2002 R77 R90
44. E.G. Seebauer, and M.C. Kratzer Mater. Sci. Eng. R 55 2006 57 149
45. E.G. Seebauer, and M.C. Kratzer Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion 2008 Springer New York
46. D. Hull, and D.J. Bacon Introduction to Dislocations 2001 Butterworth-Heinemann Oxford
47. K. Dev, M.Y.L. Jung, R. Gunawan, R.D. Braatz, and E.G. Seebauer Phys. Rev. B 68 2003 195311
48. E.G. Seebauer, K. Dev, M.Y.L. Jung, R. Vaidyanathan, C.T.M. Kwok, J.W. Ager, E.E. Haller, and R.D. Braatz Phys. Rev. Lett. 97 2006 055503
49. W. Shockley, and W.T. Read Phys. Rev. 87 1952 835
50. S.M. Sze Semiconductor Devices, Physics and Technology 2002 Wiley New York
51. K. Vanheusden, W.L. Warren, C.H. Seager, D.R. Tallant, J.A. Voigt, and B.E. Gnade J. Appl. Phys. 79 1996 7983 7990
52. S.A. Centoni, B. Sadigh, G.H. Gilmer, T.J. Lenosky, T.D. de la Rubia, and C.B. Musgrave Phys. Rev. B 72 2005 195206
53. H.Y.H. Chan, K. Dev, and E.G. Seebauer Phys. Rev. B 67 2003 035311
54. C.E. Allen, R. Ditchfield, and E.G. Seebauer J. Vac. Sci. Technol. A 14 1996 22 29
55. W.C. Lee, S.G. Lee, and K.J. Chang J. Phys.: Condens. Matter 10 1998 995 1002
56. J. Tersoff Phys. Rev. Lett. 65 1990 887 890
57. P. Mascher, S. Dannefaer, and D. Kerr Phys. Rev. B 40 1989 11764 11771
58. M.J. Puska, C. Corbel, and R.M. Nieminen Phys. Rev. B 41 1990 9980 9993
59. P.W. Tasker, and A.M. Stoneham J. Phys. C: Solid State Phys. 10 1977 5131 5140
60. R. Ditchfield, D. Llera-Rodriguez, and E.G. Seebauer Phys. Rev. Lett. 81 1998 1259 1262
61. R. Ditchfield, D. Llera-Rodriguez, and E.G. Seebauer Phys. Rev. B 61 2000 13710 13720
62. E.G. Seebauer Proceedings of the 7th International Conference on Solid-State and Integrated Circuits Technology 2004 IEEE Beijing 1032 1037
63. G. Müller, Perspectives on Inorganic, Organic and Biological Crystal Growth: From Fundamentals to Applications: Based on the lectures presented at the 13th International Summer School on Crystal Growth, Park City, UT, USA, 2007, pp. 3-33.
64. E. Dornberger, W. von Ammon, J. Virbulis, B. Hanna, and T. Sinno J. Cryst. Growth 230 2001 291 299
65. M.S. Kulkarni Ind. Eng. Chem. Res. 44 2005 6246 6263
66. M.S. Kulkarni J. Cryst. Growth 303 2007 438 448
67. M.S. Kulkarni J. Cryst. Growth 310 2008 324 335
68. A. Taguchi, H. Kageshima, and K. Wada J. Appl. Phys. 97 2005 053514
69. X. Yu, D. Yang, X. Ma, J. Yang, L. Li, and D. Que J. Appl. Phys. 92 2002 188 194
70. D. Yang, J. Chen, H. Li, X. Ma, D. Tian, L. Li, and D. Que J. Cryst. Growth 292 2006 266 271
71. D. Yang, J. Chen, H. Li, X. Ma, D. Tian, L. Li, and D. Que Phys. Status Solidi A 203 2006 685 695
72. J. Vanhellemont, P. Spiewak, K. Sueoka, and I. Romandic Phys. Status Solidi C 6 2009 1906 1911
73. B. Mizuno, K. Okashita, K. Nakamoto, C.G. Jin, Y. Sasaki, K. Tsutsui, H.A. Sauddin, and H. Iwai Extended Abstracts of the 8th International Workshop on Junction Technology 2008 IEEE Shanghai 20 24
74. B. Mizuno, Y. Sasaki, C.G. Jin, K. Okashita, K. Nakamoto, T. Kitaoka, K. Tsutsui, H.A. Sauddin, and H. Iwai Proceedings of the 9th International Conference on Solid-State and Integrated Circuits Technology 2008 IEEE Beijing 1288 1291
75. J. Gelpey, S. McCoy, A. Kontos, L. Godet, C. Hatem, D. Camm, J. Chan, G. Papasouliotis, and J. Scheuer Extended Abstracts of the 8th International Workshop on Junction Technology 2008 IEEE Shanghai 82 86
76. A. Agarwal, H.J. Gossmann, D.C. Jacobson, D.J. Eaglesham, M. Sosnowski, J.M. Poate, I. Yamada, J. Matsuo, and T.E. Haynes Appl. Phys. Lett. 73 1998 2015 2017
77. K. Goto, J. Matsuo, T. Sugii, H. Minakata, I. Yamada, and T. Hisatsugu Technical Digest - International Electron Devices Meeting 1996 IEEE 435 438
78. D. Takeuchi, N. Shimada, J. Matsuo, and I. Yamada Nucl. Instrum. Methods Phys. Res. B 121 1997 345 348
79. R. Smith, M. Shaw, R.P. Webb, and M.A. Foad J. Appl. Phys. 83 1998 3148 3152
80. S. Heo, H. Hwang, H.T. Cho, and W.A. Krull Appl. Phys. Lett. 89 2006 243516
81. Y. Kawasaki, T. Kuroi, T. Yamashita, K. Horita, T. Hayashi, M. Ishibashi, M. Togawa, Y. Ohno, M. Yoneda, T. Horsky, D. Jacobson, and W. Krull Nucl. Instrum. Methods Phys. Res. B 237 2005 25 29
82. L.A. Marques, L. Pelaz, I. Santos, and V.C. Venezia Phys. Rev. B 74 2006 201201
83. A. Renau Extended Abstracts of the 7th International Workshop on Junction Technology 2007 IEEE Kyoto 107 112
84. C.F. Tan, L.W. Teo, C.S. Yin, J.G. Lee, J. Liu, A. See, M.S. Zhou, E. Quek, S. Chu, C. Hatem, N. Variam, E. Arevalo, A. Gupta, and S. Mehta Mater. Res. Soc. Symp. Proc. 1070 2008 99 104
85. K. Ohyu, T. Itoga, and N. Natsuaki Jpn. J. Appl. Phys. 29 1990 457 462
86. T.H. Huang, H. Kinoshita, and D.L. Kwong Appl. Phys. Lett. 65 1994 1829 1831
87. N.E.B. Cowern, B. Colombeau, J. Benson, A.J. Smith, W. Lerch, S. Paul, T. Graf, F. Cristiano, X. Hebras, and D. Bolze Appl. Phys. Lett. 86 2005 101905
88. R. Duffy, V.C. Venezia, A. Heringa, B.J. Pawlak, M.J.P. Hopstaken, G.C.J. Maas, Y. Tamminga, T. Dao, F. Roozeboom, and L. Pelaz Appl. Phys. Lett. 84 2004 4283 4285
89. D. Girginoudi, and C. Tsiarapas Nucl. Instrum. Methods Phys. Res. B 266 2008 3565 3576
90. G. Impellizzeri, J.H.R. Dos Santos, S. Mirabella, F. Priolo, E. Napolitani, and A. Camera Appl. Phys. Lett. 84 2004 1862 1864
91. J.M. Jacques, L.S. Robertson, K.S. Jones, M.E. Law, M. Rendon, and J. Bennett Appl. Phys. Lett. 82 2003 3469 3471
92. B.J. Pawlak, R. Surdeanu, B. Colombeau, A.J. Smith, N.E.B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, and F. Cristiano Appl. Phys. Lett. 84 2004 2055 2057
93. E. Napolitani, A. Coati, D. De Salvador, A. Carnera, S. Mirabella, S. Scalese, and F. Priolo Appl. Phys. Lett. 79 2001 4145 4147
94. V. Moroz, Y.S. Oh, D. Pramanik, H. Graoui, and M.A. Foad Appl. Phys. Lett. 87 2005 051908
95. B.J. Pawlak, T. Janssens, B. Brijs, W. Vandervorst, E.J.H. Collart, S.B. Felch, and N.E.B. Cowern Appl. Phys. Lett. 89 2006 062110
96. A. Vanderpool, and M. Taylor Nucl. Instrum. Methods Phys. Res. B 237 2005 142 147
97. K.C. Ku, C.F. Nieh, J. Gong, L.P. Huang, Y.M. Sheu, C.C. Wang, C.H. Chen, H. Chang, L.T. Wang, T.L. Lee, S.C. Chen, and M.S. Liang Appl. Phys. Lett. 89 2006 112104
98. B.J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S.B. Felch, E.J.H. Collart, and N.E.B. Cowern Appl. Phys. Lett. 89 2006 062102
99. N. Auriac, C. Laviron, N. Cagnat, J. Singer, B. Duriez, R. Gwoziecki, G. Chabanne, and C. Rando Extended Abstracts of the 7th International Workshop on Junction Technology 2007 IEEE Kyoto 13 16
100. C.T. Liu, E.J. Lloyd, Y. Ma, M. Du, R.L. Opila, and S.J. Hillenius Technical Digest - International Electron Devices Meeting 1996 IEEE 499 502
101. S.H. Yeong, B. Colombeau, K.R.C. Mok, F. Benistant, C.J. Liu, A.T.S. Wee, G. Dong, L. Chan, and M.P. Srinivasan Mater. Sci. Eng. B 154-155 2008 43 48
102. J.A. Gregus, M.F. Vernon, R.A. Gottscho, G.R. Scheller, W.S. Hobson, R.L. Opila, and E. Yoon Plasma Chem. Plasma Process. 13 1993 521 537
103. K. Tsujimoto, S. Okudaira, and S. Tachi Jpn. J. Appl. Phys. 30 1991 3319
104. J. Wong-Leung, C. Jagadish, M.J. Conway, and J.D.F. Gerald J. Appl. Phys. 89 2001 2556 2559
105. N. Nitta, M. Taniwaki, T. Suzuki, Y. Hayashi, Y. Satoh, and T. Yoshiie Mater. Trans. 43 2002 674 680
106. K. Shoji, A. Fukami, T. Nagano, T. Tokuyama, and C.Y. Yang Appl. Phys. Lett. 60 1992 451 453
107. B.A. Turkot, D.V. Forbes, I.M. Robertson, J.J. Coleman, L.E. Rehn, M.A. Kirk, and P.M. Baldo J. Appl. Phys. 78 1995 97 103
108. M.A. Nastasi, J.W. Mayer, and J.K. Hirvonen Ion-Solid Interactions: Fundamentals and Applications 1996 Cambridge University Press New York
109. B.W. Dodson Nucl. Instrum. Methods Phys. Res. B 59-60 1991 481 486
110. A. Kuronen, J. Tarus, and K. Nordlund Nucl. Instrum. Methods Phys. Res. B 153 1999 209 212
111. S.M. Lee, C.J. Fell, D. Marton, and J.W. Rabalais J. Appl. Phys. 83 1998 5217 5223
112. D. Marton, K.J. Boyd, and J.W. Rabalais J. Vac. Sci. Technol. A 16 1998 1321 1326
113. J.W. Rabalais, A.H. Al-Bayati, K.J. Boyd, D. Marton, J. Kulik, Z. Zhang, and W.K. Chu Phys. Rev. B 53 1996 10781
114. R. Ditchfield, and E.G. Seebauer Phys. Rev. Lett. 82 1999 1185
115. R. Ditchfield, and E.G. Seebauer Phys. Rev. B 63 2001 125317
116. Z. Wang, and E.G. Seebauer Phys. Rev. B 66 2002 205409
117. Z. Wang, and E.G. Seebauer Phys. Rev. Lett. 95 2005 015501
118. Z. Wang, and E.G. Seebauer Surf. Sci. 601 2007 2453 2458
119. H.H. Lin, S.L. Cheng, L.J. Chen, C. Chen, and K.N. Tu Appl. Phys. Lett. 79 2001 3971 3973
120. E.G. Roth, O.W. Holland, V.C. Venezia, and B. Nielsen J. Electron. Mater. 26 1997 1349 1354
121. V. Raineri, R.J. Schreutelkamp, F.W. Saris, K.T.F. Janssen, and R.E. Kaim Appl. Phys. Lett. 58 1991 922 924
122. V.C. Venezia, T.E. Haynes, A. Agarwal, L. Pelaz, H.J. Gossmann, D.C. Jacobson, and D.J. Eaglesham Appl. Phys. Lett. 74 1999 1299 1301
123. S. Saito, M. Kumagai, and T. Kondo Appl. Phys. Lett. 63 1993 197 199
124. L. Shao, J.M. Zhang, J. Chen, D. Tang, P.E. Thompson, S. Patel, X.M. Wang, H. Chen, J.K. Liu, and W.K. Chu Appl. Phys. Lett. 84 2004 3325 3327
125. N.E.B. Cowern, A.J. Smith, B. Colombeau, R. Gwilliam, B.J. Sealy, and E.J.H. Collart Technical Digest - International Electron Devices Meeting 2005 IEEE Washington, DC 968 971
126. A.J. Smith, N.E.B. Cowern, R. Gwilliam, B.J. Sealy, B. Colombeau, E.J.H. Collart, S. Gennaro, D. Giubertoni, M. Bersani, and M. Barozzi Appl. Phys. Lett. 88 2006 082112
127. N.S. Bennett, N.E.B. Cowern, H. Kheyrandish, S. Paul, W. Lerch, A.J. Smith, R. Gwilliam, and B.J. Sealy Proceedings of the 38th European Solid-State Device Research Conference 2008 IEEE Edinburgh 290 293
128. P. Timans, J. Gelpey, S. McCoy, W. Lerch, and S. Paul Materials Research Society Symposium Proceedings 2006 3 14
129. K. Adachi, K. Ohuchi, N. Aoki, H. Tsujii, T. Ito, H. Itokawa, K. Matsuo, K. Suguro, Y. Honguh, N. Tamaoki, K. Ishimaru, and H. Ishiuchi Digest of Technical Papers - Symposium on VLSI Technology 2005 IEEE Kyoto 142 143
130. Y.F. Chong, K.L. Pey, A.T.S. Wee, A. See, L. Chan, Y.F. Lu, W.D. Song, and L.H. Chua Appl. Phys. Lett. 76 2000 3197 3199
131. Y. Takamura, S.H. Jain, P.B. Griffin, and J.D. Plummer J. Appl. Phys. 92 2002 230
132. T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, and T. Kusuda Jpn. J. Appl. Phys. 41 2002 2394 2398
133. W. Skorupa, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey, and E.A. Arevalo J. Electrochem. Soc. 152 2005 G436 G440
134. C.T.M. Kwok, R.D. Braatz, S. Paul, W. Lerch, and E.G. Seebauer J. Appl. Phys. 105 2009 063514
135. L. Wang, P. Clancy, M.O. Thompson, and C.S. Murthy J. Appl. Phys. 92 2002 2412
136. T.M. Kwok, Advanced methods for defect engineering in silicon, Ph.D. Thesis, University of Illinois at Urbana-Champaign, 2007.
137. S. Baek, S. Heo, H. Choi, and H. Hwang J. Vac. Sci. Technol. B 23 2005 257 261
138. W. Lerch, S. Paul, J. Niess, S. McCoy, T. Selinger, J. Gelpey, F. Cristiano, F. Severac, M. Gavelle, S. Boninelli, P. Pichler, and D. Bolze Mater. Sci. Eng. B 124-125 2005 24 31
139. J. Borland, A. Mineji, W. Krull, M. Tanjyo, R. Hillard, and T. Walker Solid State Technol. 49-5 2006 47 54
140. W.S. Yoo, and K. Kang Nucl. Instrum. Methods Phys. Res. B 237 2005 12 17
141. C.H. Poon, L.S. Tan, B.J. Cho, A. See, and M. Bhat J. Electrochem. Soc. 151 2004 G80 G83
142. J.A. Sharp, N.E.B. Cowern, R.P. Webb, K.J. Kirkby, D. Giubertoni, S. Gennaro, M. Bersani, M.A. Foad, F. Cristiano, and P.F. Fazzini Appl. Phys. Lett. 89 2006 192105
143. A. Florakis, D. Tsoukalas, I. Zergioti, K. Giannakopoulos, P. Dimitrakis, D.G. Papazoglou, G. Bennassayag, H. Bourdon, and A. Halimaoui Nucl. Instrum. Methods Phys. Res. B 253 2006 13 17
144. F. Torregrosa, C. Laviron, F. Milesi, M. Hernandez, H. Faïk, and J. Venturini Nucl. Instrum. Methods Phys. Res. B 237 2005 18 24
145. S. Earles, M. Law, R. Brindos, K. Jones, S. Talwar, and S. Corcoran IEEE Trans. Electron Devices 49 2002 1118 1123
146. E.V. Monakhov, B.G. Svensson, M.K. Linnarsson, A. La Magna, M. Italia, V. Privitera, G. Fortunato, M. Cuscuna, and L. Mariucci Appl. Phys. Lett. 87 2005 192109
147. J. Venturini, M. Hernandez, G. Kerrien, C. Laviron, D. Camel, J.L. Santailler, T. Sarnet, and J. Boulmer Thin Solid Films 453-454 2004 145 149
148. N. Bernstein, M.J. Aziz, and E. Kaxiras Phys. Rev. B 61 2000 6696
149. K. Gärtner, and B. Weber Nucl. Instrum. Methods Phys. Res. B 202 2003 255 260
150. B.A. Gillespie, and H.N.G. Wadley J. Cryst. Growth 311 2009 3195 3203
151. N.G. Rudawski, K.S. Jones, and R. Gwilliam Mater. Sci. Eng. R 61 2008 40 58
152. N.G. Rudawski, K.S. Jones, S. Morarka, M.E. Law, and R.G. Elliman J. Appl. Phys. 105 2009 081101 081120
153. J. Jie, W. Zhang, K. Peng, G. Yuan, C.S. Lee, and S.T. Lee Adv. Funct. Mater. 18 2008 3251 3257
154. Y. Cui, Z. Zhong, D. Wang, W.U. Wang, and C.M. Lieber Nano Lett. 3 2003 149 152
155. R. Vaidyanathan, E.G. Seebauer, H. Graoui, and M.A. Foad Appl. Phys. Lett. 89 2006 152114
156. S.H. Yeong, M.P. Srinivasan, B. Colombeau, L. Chan, R. Akkipeddi, C.T.M. Kwok, R. Vaidyanathan, and E.G. Seebauer Appl. Phys. Lett. 91 2007 102112
157. X. Zhang, M. Yu, C.T.M. Kwok, R. Vaidyanathan, R.D. Braatz, and E.G. Seebauer Phys. Rev. B 74 2006 235301
158. K. Dev, and E.G. Seebauer Surf. Sci. 550 2004 185 191
159. M.Y.L. Jung, R. Gunawan, R.D. Braatz, and E.G. Seebauer J. Appl. Phys. 95 2004 1134 1140
160. K.A. Schultz, and E.G. Seebauer J. Chem. Phys. 97 1992 6958 6967
161. M.Y.L. Jung, R. Vaidyanathan, C.T.M. Kwok, E. G. Seebauer (in preparation).
162. R. Vaidyanathan, New forms of defect engineering in silicon and metal oxide semiconductors, Ph.D. thesis, University of Illinois at Urbana-Champaign, 2007.
163. M.Y.L. Jung, New surface and optically stimulated physics for modeling diffusion in silicon, Ph.D. thesis, University of Illinois at Urbana-Champaign, 2003.
164. M.Y.L. Jung, and E.G. Seebauer Extended Abstracts of the 4th International Workshop on Junction Technology 2004 IEEE Shanghai 87 89
165. E.G. Seebauer Proceedings of the 8th International Conference on Solid-State and Integrated Circuits Technology 2007 IEEE Shanghai 450 453
166. R. Vaidyanathan, M.Y.L. Jung, R.D. Braatz, and E.G. Seebauer AIChE J. 52 2006 366 370
167. W. Shockley, and J.W.T. Read Phys. Rev. 87 1952 823 842
168. J.G. Simmons, and G.W. Taylor Phys. Rev. B (Solid State) 4 1971 502 511
169. R. Vaidyanathan, S. Felch, H. Graoui, M.A. Foad, E.G. Seebauer (in preparation).
170. Y. Kondratenko, Ph.D. thesis, University of Illinois at Urbana-Champaign, 2009.
171. C. Claeys, E. Simoen, K. Opsomer, D.P. Brunco, and M. Meuris Mater. Sci. Eng. B 154-155 2008 49 55
172. G. Impellizzeri, S. Mirabella, E. Bruno, A.M. Piro, and M.G. Grimaldi J. Appl. Phys. 105 2009 063533
173. A. Satta, A. D'Amore, E. Simoen, W. Anwand, W. Skorupa, T. Clarysse, B. Van Daele, and T. Janssens Nucl. Instrum. Methods Phys. Res. B 257 2007 157 160
174. S. Heo, S. Baek, D. Lee, M. Hasan, H. Jung, J. Lee, and H. Hwang Electrochem. Solid-State Lett. 9 2006 136 137
175. J. Huang, N. Wu, Q. Zhang, C. Zhu, A.A.O. Tay, G. Chen, and M. Hong Appl. Phys. Lett. 87 2005 173507
176. E. Simoen, A. Satta, A. D'Amore, T. Janssens, T. Clarysse, K. Martens, B. De Jaeger, A. Benedetti, I. Hoflijk, B. Brijs, M. Meuris, and W. Vandervorst Mater. Sci. Semicond. Process. 9 2006 634 639
177. W.C. Dunlap Jr. Phys. Rev. 94 1954 1531 1540
178. S. Uppal, A.F.W. Willoughby, J.M. Bonar, A.G.R. Evans, N.E.B. Cowern, R. Morris, and M.G. Dowsett J. Appl. Phys. 90 2001 4293 4295
179. A. Satta, E. Simoen, T. Clarysse, T. Janssens, A. Benedetti, B. De Jaeger, M. Meuris, and W. Vandervorst Appl. Phys. Lett. 87 2005 172109
180. A. Axmann, M. Schulz, and C.R. Fritzsche Appl. Phys. 12 1977 173 178
181. A. Satta, T. Janssens, T. Clarysse, E. Simoen, M. Meuris, A. Benedetti, I. Hoflijk, B. De Jaeger, C. Demeurisse, and W. Vandervorst J. Vac. Sci. Technol. B 24 2006 494 498
182. J.F. Geisz, S. Kurtz, M.W. Wanlass, J.S. Ward, A. Duda, D.J. Friedman, J.M. Olson, W.E. McMahon, T.E. Moriarty, and J.T. Kiehl Appl. Phys. Lett. 91 2007 023502
183. R.R. King, D.C. Law, K.M. Edmondson, C.M. Fetzer, G.S. Kinsey, H. Yoon, R.A. Sherif, and N.H. Karam Appl. Phys. Lett. 90 2007 183516
184. F.D. Newman, M.A. Stan, S.L. Murray, and C.S. Murray J. Cryst. Growth 272 2004 650 657
185. B. Beaumont, P. Vennégus, and P. Gibart Phys. Status Solidi B 227 2001 1 43
186. A. Sakai, H. Sunakawa, and A. Usui Appl. Phys. Lett. 73 1998 481 483
187. A.P. Edwards, J.A. Mittereder, S.C. Binari, D.S. Katzer, D.F. Storm, and J.A. Roussos IEEE Electron Device Lett. 26 2005 225 227
188. H. Hasegawa, T. Inagaki, S. Ootomo, and T. Hashizume J. Vac. Sci. Technol. B 21 2003 1844 1855
189. G. Verzellesi, A. Mazzanti, A.F. Basile, A. Boni, E. Zanoni, and C. Canali IEEE Trans. Electron Devices 50 2003 1733 1740
190. R. Yeats, D.C. D'Avanzo, K. Chan, N. Fernandez, T.W. Taylor, and C. Vogel Technical Digest - International Electron Devices Meeting 1988 IEEE 842 845
191. S.C. Binari, P.B. Klein, and T.E. Kazior Proc. IEEE 90 2002 1048 1058
192. T. Hashizume, J. Kotani, and H. Hasegawa Appl. Phys. Lett. 84 2004 4884 4886
193. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, I. Omura, and T. Ogura IEEE Trans. Electron Devices 52 2005 159 164
194. K. Keem, J. Kang, C. Yoon, D.Y. Jeong, B.M. Moon, and S. Kim Jpn. J. Appl. Phys. 46 2007 6230 6232
195. P.C. Chang, Z. Fan, C.J. Chien, D. Stichtenoth, C. Ronning, and J.G. Lu Appl. Phys. Lett. 89 2006 133113
196. C. Lao, Y. Li, C.P. Wong, and Z.L. Wang Nano Lett. 7 2007 1323 1328
197. C.S. Enache, J. Schoonman, and R. Van De Krol J. Electroceram. 13 2004 177 182
198. H. Matsui, H. Tabata, N. Hasuike, H. Harima, and B. Mizobuchi J. Appl. Phys. 97 2005 1 8
199. C.S. Enache, J. Schoonman, and R.V. Krol J. Electroceram. 13 2004 177 182
200. H. Matsui, H. Tabata, N. Hasuike, H. Harima, and B. Mizobuchi J. Appl. Phys. 97 2005 123511
201. E.-J. Lee, and S.-I. Pyun J. Appl. Electrochem. 22 1992 156 160
202. E. Comini, C. Baratto, G. Faglia, M. Ferroni, A. Vomiero, and G. Sberveglieri Prog. Mater. Sci. 54 2009 1 67
203. X.J. Huang, and Y.K. Choi Sens. Actuators B 122 2007 659 671
204. A. Kolmakov, and M. Moskovits Annu. Rev. Mater. Res. 34 2004 151 180
205. G. Shen, P.C. Chen, K. Ryu, and C. Zhou J. Mater. Chem. 19 2009 828 839
206. E. Comini Anal. Chim. Acta 568 2006 28 40
207. N. Yamazoe Sens. Actuators B 5 1991 7 19
208. Z. Fan, and J.G. Lu Appl. Phys. Lett. 86 2005 123510
209. M.W. Ahn, K.S. Park, J.H. Heo, J.G. Park, D.W. Kim, K.J. Choi, J.H. Lee, and S.H. Hong Appl. Phys. Lett. 93 2008 263103
210. B. Lei, C. Li, D. Zhang, T. Tang, and C. Zhou Appl. Phys. A 79 2004 439 442
211. P. Nguyen, H.T. Ng, J. Kong, A.M. Cassell, R. Quinn, J. Li, J. Han, M. McNeil, and M. Meyyappan Nano Lett. 3 2003 925 928
212. N. Wang, Y. Cai, and R.Q. Zhang Mater. Sci. Eng. R 60 2008 1 51
213. S. Geburt, D. Stichtenoth, S. Muller, W. Dewald, C. Ronning, J. Wang, Y. Jiao, Y.Y. Rao, S.K. Hark, and Q. Li J. Nanosci. Nanotechnol. 8 2008 244 251
214. B. Guo, A. Bermak, P.C.H. Chan, and G.Z. Yan IEEE Sens. J. 8 2008 1397 1398
215. L. Liao, H.B. Lu, J.C. Li, C. Liu, D.J. Fu, and Y.L. Liu Appl. Phys. Lett. 91 2007 173110
216. S. Lettieri, A. Setaro, C. Baratto, E. Comini, G. Faglia, G. Sberveglieri, and P. Maddalena New J. Phys. 10 2008 043013
217. C. Baratto, S. Todros, G. Faglia, E. Comini, G. Sberveglieri, S. Lettieri, L. Santamaria, and P. Maddalena Sens. Actuators B 140 2009 461 466
218. G. Faglia, C. Baratto, G. Sberveglieri, M. Zha, and A. Zappettini Appl. Phys. Lett. 86 2005 011923
219. E. Comini, C. Baratto, G. Faglia, M. Ferroni, and G. Sberveglieri J. Phys. D: Appl. Phys. 40 2007 7255 7259
220. 2 Photocatalysis: Fundamentals and Applications 1999 Bkc Tokyo
221. A. Fujishima, and K. Honda Nature 238 1972 37 38
222. A. Fujishima, T.N. Rao, and D.A. Tryk J. Photochem. Photobiol. C 1 2000 1 21
223. D. Li, and H. Haneda J. Photochem. Photobiol. A 155 2003 171 178
224. S. Sakthivel, B. Neppolian, M.V. Shankar, B. Arabindoo, M. Palanichamy, and V. Murugesan Sol. Energy Mater. Sol. Cells 77 2003 65 82
225. S.K. Kansal, M. Singh, and D. Sud J. Hazard. Mater. 141 2007 581 590
226. M. Miyauchi, A. Nakajima, T. Watanabe, and K. Hashimoto Chem. Mater. 14 2002 2812 2816
227. K.R. Reyes-Gil, E.A. Reyes-García, and D. Raftery J. Phys. Chem. C 111 2007 14579 14588
228. Y. Sun, C.J. Murphy, K.R. Reyes-Gil, E.A. Reyes-Garcia, J.P. Lilly, and D. Raftery Int. J. Hydrogen Energy 33 2008 5967 5974
229. C. Burda, Y. Lou, X. Chen, A.C.S. Samia, J. Stout, and J.L. Gole Nano Lett. 3 2003 1049 1051
230. W. Choi, A. Termin, and M.R. Hoffmann J. Phys. Chem. 98 1994 13669 13679
231. F. Gracia, J.P. Holgado, A. Caballero, and A.R. Gonzalez-Elipe J. Phys. Chem. B 108 2004 17466 17476
232. D. Wang, Y. Zou, S. Wen, and D. Fan Appl. Phys. Lett. 95 2009 012106-012108
233. J. Augustynski Electrochim. Acta 38 1993 43 46
234. R. Asahi, T. Morikawa, T. Ohwaki, K. Aoki, and Y. Taga Science 293 2001 269 271
235. O. Diwald, T.L. Thompson, E.G. Goralski, S.D. Walck, and J.T. Yates Jr. J. Phys. Chem. B 108 2004 52 57
236. A. Ghicov, J.M. Macak, H. Tsuchiya, J. Kunze, V. Haeublein, L. Frey, and P. Schmuki Nano Lett. 6 2006 1080 1082
237. J.L. Gole, J.D. Stout, C. Burda, Y. Lou, and X. Chen J. Phys. Chem. B 108 2004 1230 1240
238. H. Irie, Y. Watanabe, and K. Hashimoto J. Phys. Chem. B 107 2003 5483 5486
239. H. Wang, and J.P. Lewis J. Phys.: Condens. Matter. 18 2006 421 434
240. C. Di Valentin, G. Pacchioni, and A. Selloni Chem. Mater. 17 2005 6656 6665
241. S.U.M. Khan, M. Al-Shahry, and W.B. Ingler Jr. Science 297 2002 2243 2245
242. J.H. Park, S. Kim, and A.J. Bard Nano Lett. 6 2006 24 28
243. H. Luo, T. Takata, Y. Lee, J. Zhao, K. Domen, and Y. Yan Chem. Mater. 16 2004 846 849
244. T. Ohno, T. Mitsui, and M. Matsumura Chem. Lett. 32 2003 364 365
245. J.C. Yu, W. Ho, J. Yu, H. Yip, K.W. Po, and J. Zhao Environ. Sci. Technol. 39 2005 1175 1179
246. M. Zheng, and J. Wu Appl. Surf. Sci. 255 2009 5656 5661
247. R.G. Breckenridge, and W.R. Hosler Phys. Rev. 91 1953 793 802
248. D.C. Cronemeyer Phys. Rev. 113 1959 1222 1226
249. T. Ihara, M. Miyoshi, M. Ando, S. Sugihara, and Y. Iriyama J. Mater. Sci. 36 2001 4201 4207
250. I. Nakamura, N. Negishi, S. Kutsuna, T. Ihara, S. Sugihara, and K. Takeuchi J. Mol. Catal. A: Chem. 161 2000 205 212
251. P. Salvador, M.L.G. González, and F. Muñoz J. Phys. Chem. 96 1992 10349 10353
252. K. Takeuchi, I. Nakamura, O. Matsumoto, S. Sugihara, M. Ando, and T. Ihara Chem. Lett. 2000 1354 1355
253. S. Baruah, S.S. Sinha, B. Ghosh, S.K. Pal, A.K. Raychaudhuri, and J. Dutta J. Appl. Phys. 105 2009 074308
254. H. Bracht, E.E. Haller, and R. Clark-Phelps Phys. Rev. Lett. 81 1998 393
255. A. Ural, P.B. Griffin, and J.D. Plummer Phys. Rev. Lett. 83 1999 3454
256. D. Eaglesham Phys. World 8 1995 41 46
257. C.W.M. Castleton, A. Hoglund, and S. Mirbt Phys. Rev. B 73 2006 035215
258. C.W.M. Castleton, and S. Mirbt Phys. Rev. B 70 2004 195202
259. G. Makov, and M.C. Payne Phys. Rev. B 51 1995 4014
260. J. Lento, J.L. Mozos, and R.M. Nieminen J. Phys.: Condens. Matter. 14 2002 2637 2645
261. C.G. Van de Walle, and J. Neugebauer J. Appl. Phys. 95 2004 3851 3879
262. J.V. Beck, and K.J. Arnold Parameter Estimation in Engineering and Science 1977 Wiley New York
263. M.Y.L. Jung, R. Gunawan, R.D. Braatz, and E.G. Seebauer AIChE J. 50 2004 3248 3256
264. C.T.M. Kwok, K. Dev, R.D. Braatz, and E.G. Seebauer J. Appl. Phys. 98 2005 013524
265. M.Y.L. Jung, R. Gunawan, R.D. Braatz, and E.G. Seebauer J. Electrochem. Soc. 150 2003 G838 G842
266. R. Gunawan, M.Y.L. Jung, E.G. Seebauer, and R.D. Braatz AIChE J. 49 2003 2114 2123