The impact of nitrogen co-implantation on boron ultra-shallow junction formation and underlying physical understanding

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 43-48

  Yeong, S H ^a,b   Colombeau, B ^b   Mok, K R C ^b   Benistant, F ^b   Liu, C J ^a   Wee, A T S ^a   Dong, G ^b   Chan, L ^b   Srinivasan, M P ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Activation deactivation; Defect; End of range; N co implantation; Transient enhanced diffusion

Indexed keywords

ATOMS; CHEMICAL ACTIVATION; DIFFUSION; DOPING (ADDITIVES); ION IMPLANTATION; NITROGEN; POINT DEFECTS; VACANCIES;

ACTIVATION/DEACTIVATION; CO-IMPLANTATION; END OF RANGES; END-OF-RANGE DEFECTS; INTERSTITIALS; JUNCTION FORMATION; N CO-IMPLANTATION; NITROGEN ATOM; TRANSIENT ENHANCED DIFFUSION; ULTRA SHALLOW JUNCTION;

BORON;

EID: 56949093545     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.09.028     Document Type: Article

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