Molecular dynamics simulations of solid-phase epitaxial growth in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 202, Issue , 2003, Pages 255-260

  Gartner K ^a   Weber, B ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED OPTICS AND PRECISION ENGINEERING   (Germany)

Author keywords

Amorphous crystalline interface; Crystallization; MD simulation; Silicon

Indexed keywords

COMPUTER SIMULATION; CRYSTAL ATOMIC STRUCTURE; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MELTING; MOLECULAR DYNAMICS; QUENCHING; SURFACE ROUGHNESS;

SOLID-PHASE EPITAXIAL GROWTH (SPEG);

AMORPHOUS SILICON;

EID: 0037377404     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(02)01866-9     Document Type: Conference Paper

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