Germanium n+/p junction formation by laser thermal process

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages 1-3

  Huang, Jidong ^a   Wu, Nan ^a   Zhang, Qingchun ^a   Zhu, Chunxiang ^a   Tay, Andrew A O ^a   Chen, Guoxin ^a   Hong, Minghui ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; IRRADIATION; SEMICONDUCTOR JUNCTIONS;

IRRADIATION PULSE; LASER ENERGY FLUENCE; LASER THERMAL ANNEALING;

GERMANIUM;

EID: 28344439866     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2115078     Document Type: Article

References (10)

1. S. M. Sze, Physics of Semicondutor Devices, 2nd ed. (Wiley, New York, 1981), p. 849.
2. H. Shang, K. L. Lee, P. Kozlowski, C. D. Emic, I. Babich, E. Sikorski, M. Ieong, H. S. P. Wong, K. Guarini, and W. Haensch, IEEE Electron Device Lett. 25, 135 (2004).
3. C. Jasper, L. Rubin, C. Lindfors, K. S. Jones, and J. Oh, IEEE Proceedings of the 14th International Conference on Ion Implatation Technology (IEEE, New York, 2002), p. 548.
4. N. Wu, Q. C. Zhang, C. Zhu, D. S. H. Chan, M. F. Li, L. Tan, N. Balasubramanian, A. Chin, and D.-L. Kwong (unpublished).
5. B. Yu, Y. Wang, H. Wang, Q. Xiang, C. Riccobene, S. Talwar, and M. Lin, Tech. Dig. - Int. Electron Devices Meet. 1999, 509.
6. A. A. Ramadan, R. D. Gould, and A. Ashour, Thin Solid Films 239, 272 (1994).
7. Y. F. Chong, K. L. Pey, A. T. S. Wee, A. See, L. Chan, Y. F. Lu, W. D. Song, and L. H. Chua, Appl. Phys. Lett. 76, 3197 (2000).
8. C. H. Poon, B. J. Cho, Y. F. Lu, M. Bhat, and A. See, J. Vac. Sci. Technol. B 21, 706 (2003).
9. D. J. McCulloch and S. D. Brotherton, Appl. Phys. Lett. 66, 2060 (1995).
10. C. O. Chui, K. Gapalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, Appl. Phys. Lett. 83, 3275 (2003).