Excimer laser thermal processing of ultra-shallow junction: Laser pulse duration

Thin Solid Films

Volumn 453-454, Issue , 2004, Pages 145-149

  Venturini, J ^a   Hernandez, M ^a   Kerrien, G ^c   Laviron, C ^b   Camel, D ^b   Santailler, J L ^b   Sarnet, T ^c   Boulmer, J ^c  

^a SOPRA   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Activation; Doping; Excimer; Laser; Silicon

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DOPING (ADDITIVES); HELIUM NEON LASERS; LASER PULSES; LIGHT REFLECTION; MOSFET DEVICES; SECONDARY ION MASS SPECTROMETRY; SOLIDIFICATION;

LASER THERMAL PROCESSING (LTP); ULTRA-SHALLOW JUNCTION (USJ);

EXCIMER LASERS;

EID: 1542426305     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.11.087     Document Type: Conference Paper

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