Device performance improvement with Nitrogen implanted during LDD sequence

Extended Abstracts of the 7th International Workshop on Junction Technology, IWJT 2007

Volumn , Issue , 2007, Pages 13-16

  Auriac, N ^a   Laviron, C ^b   Cagnat, N ^d   Singer, J ^c   Duriez, B ^d   Gwoziecki, R ^b   Chabanne, G ^a   Rando, C ^a  

^a Freescale Semiconductors   (France)

^b CEA LETI   (France)

^c NXP SEMICONDUCTORS   (France)

^d STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47649116248     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2007.4279935     Document Type: Conference Paper

References (7)

1. B.J Pawlak et al. "The carbon co-implant with spike RTA solution for boron extension" MRS spring meeting, 2006)
2. N[S.Nakashima, M.Takahashi " Suppression of lateral Transcient Enhnaced Dopant Diffusion by Nitrogen implantation and its application to fully depleted MOSFET's/SIMOX"
3. O.Dokumaci, P.Ronsheim, S.Hedge, D.Chidambarrao, L.S.Adam, and A.Yasuoka, Nucl. Instr. And Meth. in Phys.Res. B 121, 257 (1997)
4. O.Dokumaci, R.Kaplan, M.Khare, P. Ronsheim, J.Burnham, A.Domenicucci, J. Li, R.Fleming, L.S. Adam and M.E.Law. Mat. Res. Soc. Symp. Proc. Vol.669 2001)
5. "Investigation of nMOSFET performance Improvement by pocket Co-implant Engineering" D.Villanueva, E.Josse, R.Ranica, B.Duriez, J.Singer, F.Salvetti, C.Laviron, N.Cagnat, A.Juge, N.Cave & M.Haond
6. Y.Nakabayashi and al., IEDM Tech Dig, 2005
7. "Comprehensive model for Nitrogen Diffusion in Silicon" L.S Adam, M.E. Law, S.Hedge, O.Dokumaci IEDM 2001