Vacancy-engineering implants for high boron activation in silicon on insulator

Applied Physics Letters

Volumn 88, Issue 8, 2006, Pages

  Smith, A J ^a   Cowern, N E B ^a   Gwilliam, R ^a   Sealy, B J ^a   Colombeau, B ^b   Collart, E J H ^c   Gennaro, S ^d   Giubertoni, D ^d   Bersani, M ^d   Barozzi, M ^d  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c Applied Materials UK Ltd   (United Kingdom)

^d ITC IRST   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

INTERSTITIAL CLUSTERS; PHASE EPITAXIAL REGROWTH; SILICON-ON-INSULATOR STRUCTURE; VACANCY ENGINEERING;

ACTIVATION ANALYSIS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC INSULATORS; EPITAXIAL GROWTH; SILICON;

BORON;

EID: 33644522384     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2178487     Document Type: Article

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