Shallow junction formation by polyatomic cluster ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 121, Issue 1-4, 1997, Pages 345-348

  Takeuchi, D ^a   Shimada, N ^a   Matsuo, J ^a   Yamada, I ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON COMPOUNDS; ELECTRIC CONDUCTIVITY OF SOLIDS; HYDROGEN INORGANIC COMPOUNDS; ION BEAMS; ION IMPLANTATION; RADIATION EFFECTS;

CLUSTER ION BEAMS;

SEMICONDUCTOR JUNCTIONS;

EID: 0031546179     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00451-X     Document Type: Article

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