Interstitial charge states in boron-implanted silicon

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  Jung, M Y L ^a   Kwok, Charlotte T M ^a   Braatz, Richard D ^a   Seebauer, E G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN CONSTANT; ELECTRON CHARGE; SECONDARY ION MASS SPECTROMETRY (SIMS); TRANSIENT ENHANCED DIFFUSION (TED);

ACTIVATION ENERGY; BORON; BOUNDARY CONDITIONS; DIFFUSION; ELECTRIC FIELDS; MASS SPECTROMETRY; MATHEMATICAL MODELS; REACTION KINETICS; SILICON WAFERS; THERMODYNAMICS;

ION IMPLANTATION;

EID: 20444433149     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829787     Document Type: Article

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