Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1733-1740

  Verzellesi, Giovanni ^a   Mazzanti, Andrea ^a   Basile, Alberto F ^a   Boni, Alessandro ^a   Zanoni, E ^b   Canali, Claudio ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF PADOVA   (Italy)

Author keywords

Gallium compounds; Semiconductor device measurements; Semiconductor device modeling; Transient response

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

TRANSIENT RESPONSE;

FIELD EFFECT TRANSISTORS;

EID: 0041525559     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815134     Document Type: Article

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