Vacancy charging on Si(100)-(2X1): Consequences for surface diffusion and STM imaging

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 3, 2003, Pages 353111-353117

  Yeung, Ho ^a   Chan, H ^a   Dev, Kapil ^a   Seebauer, E G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC METHOD; ARTICLE; CALCULATION; DIFFUSION; IMAGING SYSTEM; PHENOMENOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; SURFACE PROPERTY; THERMAL ANALYSIS;

EID: 0037437831     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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