Grown-in defects in nitrogen-doped Czochralski silicon

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 188-194

  Yu, Xuegong ^a   Yang, Deren ^a   Ma, Xiangyang ^a   Yang, Jiansong ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIGINATED PARTICLES; CZ SILICON; CZOCHRALSKI SILICON; HIGH-TEMPERATURE ANNEALING; NITROGEN-DOPED CZOCHRALSKI; NITROGEN-DOPED CZOCHRALSKI SILICONS; OXYGEN ATOM; OXYGEN PRECIPITATES; OXYGEN PRECIPITATION; SHARP CONTRAST; TENTATIVE MODELS; TWO-STEP ANNEALING; VOID FORMATION;

CRYSTAL DEFECTS; NITROGEN; OXYGEN; OXYGEN VACANCIES; PRECIPITATION (CHEMICAL);

SILICON WAFERS;

EID: 0036640203     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1481190     Document Type: Article

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