Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon

Materials Science and Engineering R: Reports

Volumn 61, Issue 1-6, 2008, Pages 40-58

  Rudawski, N G ^a   Jones, K S ^a   Gwilliam, R ^b  

^a University of Florida   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Amorphous; Ion implantation; Silicon; Solid phase epitaxial growth; Strain; Stress

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION; EPITAXIAL GROWTH; ION IMPLANTATION; NUCLEATION;

MORPHOLOGICAL INSTABILITIES; SOLID-PHASE EPITAXIAL CRYSTALLIZATION; UNIAXIAL COMPRESSIVE STRESS;

AMORPHOUS SILICON;

EID: 42949090252     PISSN: 0927796X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mser.2008.02.002     Document Type: Review

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