P implantation doping of Ge: Diffusion, activation, and recrystallization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 24, Issue 1, 2006, Pages 494-498

  Satta, A ^a   Janssens, T ^a   Clarysse, T ^a   Simoen, E ^a   Meuris, M ^a   Benedetti, A ^a   Hoflijk, I ^a   De Jaeger, B ^a   Demeurisse, C ^a   Vandervorst, W ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DOPING (ADDITIVES); GERMANIUM; RECRYSTALLIZATION (METALLURGY);

IMPLANT ENERGIES; THERMAL BUDGET;

ION IMPLANTATION;

EID: 31644447354     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2162565     Document Type: Article

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