Performance characteristics of 65nm PFETs using molecular implant species for source and drain extensions

Materials Research Society Symposium Proceedings

Volumn 1070, Issue , 2008, Pages 99-104

  Tan, C F ^a   Teo, L W ^a   Yin, C S ^a   Lee, J G ^a   Liu, J ^a   See, A ^a   Zhou, M S ^a   Quek, E ^a   Chu, S ^a   Hatem, C ^b   Variam, N ^b   Arevalo, E ^b   Gupta, A ^b   Mehta, S ^b  

^a Technology Development   (Singapore)

^b VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATERIALS SCIENCE;

DEVICE CHARACTERISTICS; ELECTRICAL MEASUREMENT; EXTERNAL RESISTANCE; IV CHARACTERISTICS; MOLECULAR IMPLANTS; PERFORMANCE CHARACTERISTICS; SOURCE AND DRAIN EXTENSIONS; ULTRA SHALLOW JUNCTION;

BORON;

EID: 62949088031     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1070-e03-02     Document Type: Conference Paper

References (5)

1. H.-J. Gossmann, G. Redinbo, Y. Erokhin, T. Romig, K. Elshot, J. Xu, and J. McComb, Solid State Technology, July 2007.
2. H.-J. Gossmann, Proceedings of the International Workshop on Semiconductor Device Fabrication, Metrology, and Modeling (INSIGT-2007).
3. D. Jacobson et al., Nucl. Instr. & Meth. in Phys. B 237 (2005) 406-410.
4. A. Renau, IWJT 2007, p. 107.
5. N. Variam et al., 15th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007, p. 291.