Understanding, modeling and optimizing vacancy engineering for stable highly boron-doped ultrashallow junctions

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 968-971

  Cowern, N E B ^a   Smith, A J ^a   Colombeau, B ^b   Gwilliam, R ^a   Sealy, B J ^a   Collart, E J H ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c Applied Materials UK Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ION IMPLANTATION; SEMICONDUCTOR DOPING; VACANCIES;

DEACTIVATION; PREAMORPHISATION; SOURCE/DRAIN (S/D) JUNCTIONS; ULTRASHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 33847758231     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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