Electrical activation of ultra-shallow B and BF2 implanted silicon by flash anneal

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 12-17

  Yoo, Woo Sik ^a   Kang, Kitaek ^a  

^a WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; BORON COMPOUNDS; CRYSTAL DEFECTS; ION IMPLANTATION; SEMICONDUCTOR DOPING;

DOPANTS; FLASH LAMP ANNEALING; ULTRA-SHALLOW ION IMPLANTATION; WAFER PROCESSING;

SILICON WAFERS;

EID: 23444449589     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.107     Document Type: Conference Paper

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