Mechanism for the reduction of interstitial supersaturations in MeV-implanted silicon

Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1299-1301

  Venezia, V C ^a,d   Haynes, T E ^b   Agarwal, Aditya ^c   Pelaz, L ^a,e   Gossmann, H J ^a   Jacobson, D C ^a   Eaglesham, D J ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c EATON CORPORATION   (United States)

^d UNIVERSITY OF NORTH TEXAS   (United States)

^e UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001110404     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123530     Document Type: Article

References (23)

1. K. Tsukamoto, T. Kuroi, S. Komori, and Y. Akasaka, Solid State Technol., 39 (1992).
2. L. Rubin, Semicond. Int., 11 (1997).
3. B. Nielson, O. W. Holland, T. C. Leung, and K. G. Lynn, J. Appl. Phys. 74, 1636 (1993).
4. O. W. Holland, L. Xie, B. Nielsen, and D. S. Zhou, J. Electron. Mater. 25, 99 (1996).
5. M. Tamura, N. Natsuaki, Y. Wada, and E. Mitani, Nucl. Instrum. Methods Phys. Res. B 21, 438 (1987).
6. D. J. Eaglesham, T. E. Haynes, H.-J. Gossmann, D. C. Jacobson, P. A. Stolk, and J. M. Poate, Appl. Phys. Lett. 70, 3281 (1997).
7. V. C. Venezia, T. E. Haynes, A. Agarwal, H.-J. Gossmann, and D. J. Eaglesham, Mater. Res. Soc. Symp. Proc. 469, 303 (1997).
8. J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, J. M. Poate, and S. Coffa, J. Appl. Phys. 82, 120 (1997).
9. V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998).
10. Q. T. Zhao and Z. L. Wang, Nucl. Instrum. Methods Phys. Res. B 108, 81 (1996).
11. V. Raineri, R. J. Schreutelkamp, F. W. Saris, K. T. F. Jansen, and R. E. Kaim, Appl. Phys. Lett. 58, 922 (1991).
12. K. Kyllesbech Larsen, V. Privitera, S. Coffa, F. Priolo, C. Spinella, M. Saggio, and S. U. Campisano, Nucl. Instrum. Methods Phys. Res. B 112, 139 (1996).
13. E. G. Roth, O. W. Holland, V. C. Venezia, and B. Nielsen, J. Electron. Mater. 26, 1349 (1997).
14. P. M. Fahey, P. B. Griffen, and J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
15. T. Kuroi, S. Komori, H. Miyatake, and K. Tsukamoto, Tech. Dig. Int. Electron Devices Meet., San Francisco, 1990 (IEEE, New York, 1990), p. 261.
16. D. Tsoukalas, C. Tsamis, and J. Stoemenos, Appl. Phys. Lett. 63, 3167 (1993).
17. M. T. Robinson and I. M. Torrens, Phys. Rev. B 9, 5008 (1974).
18. M. Jaraiz, L. Pelaz, J. E. Rubio, J. Barbolla, G. H. Gilmer, D. J. Eaglesham, H.-J. Gossmann, and J. M. Poate, Mater. Res. Soc. Symp. Proc. 532, 43 (1998).
19. P. A. Stolk, H.-J. Gossmann, D. J. Eaglesham, D. C. Jacobson, C. S. Rafferty, G. H. Gilmer, M. Jaraiz, J. M. Poate, H. S. Luftman, and T. E. Haynes, J. Appl. Phys. 81, 6031 (1997).
20. H.-J. Gossmann, C. S. Rafferty, F. C. Unterwald, and T. Boone, Appl. Phys. Lett. 67, 1558 (1995).
21. V. C. Venezia, L. Pelaz, H.-J. Gossmann, T. E. Haynes, A. Agarwal, D. C. Jacobson, and D. J. Eaglesham (unpublished data).
22. H.-J. Gossmann, T. E. Haynes, P. A. Stolk, D. C. Jacobson, G. H. Gilmer, J. M. Poate, H. S. Luftman, T. K. Mogi, and M. O. Thompson, Appl. Phys. Lett. 71, 3862 (1997).
23. O. W. Holland, D. S. Zhou, and D. K. Thomas, Appl. Phys. Lett. 63, 896 (1993).