Annealing techniques for optimizing 45nm-node USJs

Solid State Technology

Volumn 49, Issue 5, 2006, Pages 47-54

  Borland, John ^a,g   Mineji, Akira ^b   Krull, Wade ^c   Tanjyo, Masayasu ^d   Hillard, Robert ^e   Walker, Tom ^f  

^a JOB Technologies   (United States)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Ceradyne Inc   (United States)

^d NISSIN ION EQUIPMENT CO LTD   (Japan)

^e Solid State Measurements   (United States)

^f Accent Optical Technologies   (United States)

^g JOB Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANT ACTIVATION; FLASH ANNEALING; LASER ANNEALING; ULTRA-SHOLLOW JUNCTIONS (USJ);

ANNEALING; DIFFUSION; ION IMPLANTATION; LASER APPLICATIONS; OPTIMIZATION;

SEMICONDUCTOR JUNCTIONS;

EID: 33745230061     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (3)

1. J. Borland, M. Tanjo, N. Nagai, T. Aoyama, D. Jacobson, "Applying Equivalent Scaling to USJ Implantation," Semiconductor International, p, 52, Jan. 2005.
2. T. Aoyama, M. Fukuda, Y. Nara, S. Umisedo, N. Hamamoto, M. Tanjo, T. Nagayama, "Decaborane Ion Implantation for Sub-40nm Gate Length PMOSFETs to Enable Formation of Steep Ultra-shallow Junction and Small Threshold Voltage Fluctuation," IWJT-2005, section S2-2, p. 27, June 2005.
3. J. Borland, T. Matsuda and K. Sakamoto, "Shallow and Abrupt Junction Formation: Paradigm Shift at 65-70nm," Solid State Technology, p. 83, June 2002.