Ultrashallow (<10 nm)p +/n junction formed by B 18H 22 cluster ion implantation and excimer laser annealing

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Heo, Sungho ^a   Hwang, Hyunsang ^a   Cho, H T ^b   Krull, W A ^b  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Ceradyne Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASER ANNEALING; ULTRASHALLOW JUNCTION PROCESSES;

AMORPHOUS MATERIALS; ANNEALING; EXCIMER LASERS; ION IMPLANTATION; SILICON;

SEMICONDUCTOR JUNCTIONS;

EID: 33845783795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405863     Document Type: Article

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