Advanced activation of ultra-shallow junctions using flash-assisted RTP

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 24-31

  Lerch, W ^a   Paul, S ^a   Niess, J ^a   McCoy, S ^b   Selinger, T ^b   Gelpey, J ^b   Cristiano, F ^c   Severac, F ^c   Gavelle, M ^c   Boninelli, S ^d   Pichler, P ^e   Bolze, D ^f  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

^b Mattson Technology Canada Inc   (Canada)

^c LAAS CNRS   (France)

^d CEMES CNRS   (France)

^e FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^f IHP   (Germany)

Author keywords

Advanced logic device; Boron; Crystalline and amorphous silicon; Dopant activation and deactivation; Flash assisted RTP; Hall effect measurements; Ultra shallow junctions

Indexed keywords

AMORPHOUS SILICON; BORON; DOPING (ADDITIVES); HALL EFFECT; LOGIC DEVICES; RAPID THERMAL ANNEALING; SILICON WAFERS; TEMPERATURE DISTRIBUTION; THERMODYNAMIC STABILITY; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

ADVANCED-LOGIC DEVICE; CRYSTALLINE AND AMORPHOUS SILICON; DOPANT ACTIVATION AND DEACTIVATION; FLASH-ASSISTED RTP; HALL-EFFECT MEASUREMENTS; ULTRA-SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 27844451913     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.047     Document Type: Conference Paper

References (20)

1. International Technology Roadmap for Semiconductors, 2003 ed., Update December 2004. Semiconductor Industry Association, San Jose, CA.
2. J.C. Gelpey, K. Elliott, D. Camm, S. McCoy, J. Ross, D.F. Downey, and E.A. Arevalo Electrochem. Soc. Proc. 2002-11 2002 313 324
3. S. McCoy, E.A. Arevalo, J.C. Gelpey, D.F. Downey, 12th International Conference on Advanced Thermal Processing of Semiconductors - RTP 2004, 2004, pp. 99-108.
4. W. Lerch, S. Paul, J. Niess, F. Cristiano, Y. Lamrani, P. Calvo, N. Cherkashin, D.F. Downey, and E.A. Arevalo Electrochem. Soc. Proc. 2004-1 2004 90 105
5. S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo, Workshop on Ultra-shallow Junction Formation, USJ 2003, 27 April-1 May 2003, Santa Cruz, CA, 2003, p. 111.
6. U. Ehrke, A. Sears, W. Lerch, S. Paul, G. Roters, D.F. Downey, and E.A. Arevalo J. Vac. Sci. Technol. B 22 1 2004 1 4
7. W. Lerch, B. Bayha, D.F. Downey, and E.A. Arevalo Electrochem. Soc. Proc. 2001-9 2001 321 336
8. A. Mokhberi, P.B. Griffin, J.D. Plummer, E. Paton, S. McCoy, and K. Elliott IEEE Trans. Electron Dev. 49 7 2002 1183 1191
9. R.B. Fair, and J.C.C. Tsai F.F.Y. Wang Impurity Doping Processes in Silicon 1981 North Holland The Netherlands, Amsterdam
10. W. Skorupa, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey, and E.A. Arevalo J. Electrochem. Soc. 152 6 2005 436 440
11. F. Cristiano, W. Lerch, private communications.
12. B.L. Crowder J. Electrochem. Soc. 118 1971 943 952
13. A. Claverie, B. Colombeau, D. Mauduit, C. Banofas, X. Hebras, G. Ben Assayag, and F. Cristiano Appl. Phys. A 76 2003 1025 1033
14. F. Cristiano, X. Hebras, N. Cherkashin, A. Claverie, W. Lerch, and S. Paul Appl. Phys. Lett. 83 2003 5407 5409
15. A. Lauwers, A. Steegen, M. de Potter, R. Lindsay, A. Satta, H. Bender, and K. Maex J. Vac. Sci. Technol. B 19 6 2001 2026
16. A. Lauwers, J.A. Kittl, A. Akheyar, M. Van Dal, O. Chamirian, M. de Potter, R. Lindsay, and K. Maex Electrochem. Soc. Proc. 2004-13 2003 167 176
17. J.P. Lu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, M. Hewson, J. Ruan, L. Tsung, R. Kuan, T. Grider, D. Mercer, and C. Montgomery IEDM Tech. Dig. 2002 371 374
18. B.J. Pawlak, R. Surdeanu, B. Colombeau, A.J. Smith, N.E.B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard, and F. Cristiano Appl. Phys. Lett. 84 12 2004 2055 2057
19. A. Armigliato, D. Nobili, P. Otoja, M. Servidori, S. Solmi, in: H.R. Huff, E.Sirtl (Eds.), Electrochem. Soc. Proc. 77-2 Semiconductor Silicon 1977, 1977, p. 638.
20. E. Landi, S. Guimaraes, and S. Solmi Appl. Phys. A 44 1987 135 141