Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: Effects of ion mass and adsorbate-substrate pairing

Surface Science

Volumn 601, Issue 12, 2007, Pages 2453-2458

  Wang, Zhengguang ^a   Seebauer, Edmund G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Diffusion; Interactions of atoms and molecules with surfaces; Ion radiation effects; Semiconductors

Indexed keywords

GERMANIUM; ION BOMBARDMENT; MOLECULAR INTERACTIONS; SEMICONDUCTOR MATERIALS; SILICON; SURFACE DIFFUSION;

DEFECT FORMATION; ION RADIATION EFFECTS; THRESHOLD ENERGY;

DEFECTS;

EID: 34249864420     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.04.159     Document Type: Article

References (32)

1. Wong-Leung J., Jagadish C., Conway M.J., and Gerald J.D.F. J. Appl. Phys. 89 (2001) 2556
2. Tsujimoto K., Okudaira S., and Tachi S. Jpn. J. Appl. Phys. Part 1 30 12A (1991) 3319
3. Gregus J.A., Vernon M.F., Gottscho R.A., Scheller G.R., Hobson W.S., Opila R.L., and Yoon E. Plasma Chem. Plasma Process. 13 (1993) 521
4. Nitta N., Taniwaki M., Suzuki T., Hayashi Y., Satoh Y., and Yoshiie T. Mater. Trans. 43 (2002) 674
5. Turkot B.A., Forbes D.V., Robertson I.M., Coleman J.J., Rehn L.E., Kirk M.A., and Baldo P.M. J. Appl. Phys. 78 (1995) 97
6. Shoji K., Fukami A., Nagano T., Tokuyama T., and Yang C.Y. Appl. Phys. Lett. 60 (1992) 451
7. Nastasi M., Mayer J.W., and Hirvonen J.K. Ion-Solid Interactions: Fundamentals and Applications (1996), Cambridge University Press, New York
8. Dodson B.W. Nucl. Instr. Meth. Phys. Res. B 59/60 (1991) 481
9. Kuronen A., Tarus J., and Nordlund K. Nucl. Instr. Meth. Phys. Res. B 153 (1999) 209
10. Rabalais J.W., Al-Bayati A.H., Boyd K.J., Marton D., Kulik J., Zhang Z., and Chu W.K. Phys. Rev. B 53 (1996) 10781
11. Lee S.M., Fell C.J., Marton D., and Rabalais J.W. J. Appl. Phys. 83 (1998) 5217
12. Marton D., Boyd K.J., and Rabalais J.W. J. Vac. Sci. Technol. A 16 (1998) 1321
13. Ditchfield R., and Seebauer E.G. Phys. Rev. Lett. 82 (1999) 1185
14. Ditchfield R., and Seebauer E.G. Phys. Rev. B 63 (2001) 1153
15. Wang Z., and Seebauer E.G. Phys. Rev. B 66 (2002) 205409
16. Wang Z., and Seebauer E.G. Phys. Rev. Lett. 95 (2005) 015501
17. Schultz K.A., and Seebauer E.G. J. Chem. Phys. 97 (1992) 6958
18. Schultz K.A., Suni I.I., and Seebauer E.G. J. Opt. Soc. Am. B 10 (1993) 546
19. Allen C.E., Ditchfield R., and Seebauer E.G. Phys. Rev. B 55 (1997) 13304
20. Steinbruchel C. Appl. Phys. Lett. 55 (1989) 1960
21. Chang J.P., Mahorowala A.P., and Sawin H.H. J. Vac. Sci. Technol. A 16 (1998) 217
22. Greene J.E., and Barnett S.A. J. Vac. Sci. Technol. 21 (1984) 285
23. Sigmund P. Sputtering by Particle Bombardment I (1981), Springer-Verlag, New York 9
24. Nastasi M., Mayer J.W., and Hirvonen J.K. Ion-Solid Interactions: Fundamentals and Applications (1996), Cambridge University Press, New York
25. Stillinger F.H., and Weber T.A. Phys. Rev. B 31 (1985) 5262
26. Ziegler J.F., Biersack J.P., and Littmark U. The Stopping and Range of Ions in Solids (1985), Pergamon Press, New York
27. Ditchfield R., Llera-Rodri{dotless}́guez D., and Seebauer E.G. Phys. Rev. Lett. 81 (1998) 1259
28. Ditchfield R., Llera- Rodri{dotless}́guez D., and Seebauer E.G. Phys. Rev. B 61 (2000) 13710
29. Frank W., Gosele U., Mehrer H., and Seeger A. Diffusion in Silicon and Germanium. In: Murch G.E., and Nowick A.S. (Eds). Diffusion in Crystalline Solids (1984), Academic, New York 64
30. Swalin R. J. Appl. Phys. 29 (1958) 670
31. Hardy J.R., and Bullough R. Phil. Mag. 15 (1967) 237
32. Brailsford A.D. J. Appl. Phys. 40 (1969) 3087