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Journal of Crystal Growth

Volumn 230, Issue 1-2, 2001, Pages 291-299

Modeling of transient point defect dynamics in Czochralski silicon crystals

(5) Dornberger, E a Von Ammon, W a Virbulis, J a Hanna, B a Sinno, T b

a SILTRONIC AG (Germany)

b UNIVERSITY OF PENNSYLVANIA (United States)

Author keywords

A1. Defects; A1. Diffusion; A1. Heat transfer; A1. Point defects; A2. Czochralski method; B2. Semiconducting silicon

Indexed keywords

BOUNDARY CONDITIONS; COMPUTER SIMULATION; CRYSTAL GROWTH FROM MELT; DIFFUSION IN SOLIDS; HEAT TRANSFER; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POINT DEFECTS; SEMICONDUCTOR GROWTH; THERMAL GRADIENTS;

INTERSTITIALS; VACANCIES;

SEMICONDUCTING SILICON;

EID: 0035426405 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01319-7 Document Type: Conference Paper

Times cited : (48)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.