Plasma Doping (PD) for ultra-shallow junction

IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Volumn , Issue , 2008, Pages 20-24

  Mizuno, B ^a   Okashita, K ^a   Nakamoto, K ^a   Jin, C G ^a   Sasaki, Y ^a   Tsutsui, K ^b   Sauddin, H A ^b   Iwai, H ^b  

^a Ultimate Junction Technologies Inc ^*  (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER NETWORKS; HELIUM; PLASMAS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTOR DOPING;

3-D STRUCTURES; PLANAR TRANSISTORS; PLASMA DOPING;

SEMICONDUCTOR JUNCTIONS;

EID: 50849104575     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2008.4540009     Document Type: Conference Paper

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