Measurement of defect-mediated diffusion: The case of silicon self-diffusion

AIChE Journal

Volumn 52, Issue 1, 2006, Pages 366-370

  Vaidyanathan, Ramakrishnan ^a   Jung, Michael Y L ^a   Braatz, Richard D ^a   Seebauer, E G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION PROFILES; DIFFUSION LENGTH; SELF DIFFUSION; THIN FILM DEPOSITION;

CONCENTRATION (PROCESS); CRYSTAL LATTICES; DEFECTS; DEPOSITION; SILICON; THIN FILMS;

DIFFUSION;

CONCENTRATION (PROCESS); CRYSTAL LATTICES; DEFECTS; DEPOSITION; DIFFUSION; SILICON; THIN FILMS;

EID: 33645326904     PISSN: 00011541     EISSN: 15475905     Source Type: Journal    
DOI: 10.1002/aic.10587     Document Type: Article

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