|
|
Volumn 43, Issue 4, 2002, Pages 674-680
|
|
Formation of anomalous defect structure on GaSb surface by low temperature Sn ion-implantation
a
|
|
Author keywords
Amorphous; Anomalous behavior; Cavity; Cross sectional transmission electron microscopy; Defect formation mechanism; Defect structure; Elevation; Energy dispersive X ray spectroscopy; Fourier transformation; Gallium antimonide; High resolution transmission electron microscopy; Honey comb; III V compound semiconductor; Interstitial; Local composition; Low temperature implantation; Microtwin; Point defects; Scanning electron microscopy; Strain; Surface defect; Swelling; Tin ion implantation; Vacancy; Void
|
|
Indexed keywords
AMORPHOUS MATERIALS;
CRYSTAL STRUCTURE;
ENERGY DISPERSIVE SPECTROSCOPY;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
HIGH RESOLUTION ELECTRON MICROSCOPY;
ION IMPLANTATION;
LOW TEMPERATURE OPERATIONS;
POINT DEFECTS;
POSITIVE IONS;
SCANNING ELECTRON MICROSCOPY;
TIN;
TRANSMISSION ELECTRON MICROSCOPY;
GALLIUM ANTIMONIDE;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
HONEY COMB;
LOW TEMPERATURE ION IMPLANTATION;
SEMICONDUCTING GALLIUM COMPOUNDS;
|
|
EID: 0036543414
PISSN: 13459678
EISSN: None
Source Type: Journal
DOI: 10.2320/matertrans.43.674 Document Type: Article |
|
Times cited : (22)
|
|
References (18)
|
