Thermodynamic and kinetic studies of laser thermal processing of heavily boron-doped amorphous silicon using molecular dynamics

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2412-2419

  Wang, Liguo ^a   Clancy, Paulette ^a   Thompson, Michael O ^a   Murthy, Cheruvu S ^b  

^a Cornell University   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

B-DOPED SI; BORON ATOM; BORON CONCENTRATIONS; BORON-DOPED; BORON-INTERSTITIALS; DEFECT-FREE; EXPERIMENTAL STUDIES; HIGH CONCENTRATION; INTERATOMIC POTENTIAL MODELS; KINETIC PROPERTIES; KINETIC STUDY; LASER THERMAL PROCESSING; NON EQUILIBRIUM MOLECULAR DYNAMIC (NEMD); PARTIAL AMORPHIZATION; PROCESS WINDOW; QUANTUM-MECHANICAL CALCULATION; SYSTEM SIZE; TIGHT BINDING; TRANSIENT ENHANCED DIFFUSION; ULTRA SHALLOW JUNCTION;

ARSENIC; COMPUTER SIMULATION; DEFECTS; DOPING (ADDITIVES); LASER HEATING; MOLECULAR DYNAMICS; SILICON; SILICON ALLOYS;

ATOMS;

EID: 0036735423     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1497459     Document Type: Article

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