Ultra-shallow junction formation in SOI using vacancy engineering

AIP Conference Proceedings

Volumn 876, Issue , 2006, Pages 181-190

  Gwilliam, R M ^a   Cowern, N E B ^a   Colombeau, B ^b   Sealy, B ^a   Smith, A J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Boron; SOI; Source drain extensions; Vacancy engineering

Indexed keywords

EID: 33847010231     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2406027     Document Type: Conference Paper

References (31)

1. ITRS http://public.itrs.net, 27 (2004).
2. A.Michel, W.Rausch, P.Ronsheim, and R.Kastl, Appl.Phys.Lett. 50, 416 (1987).
3. N.Cowern, K.Janssen, and H.Jos, J.Appl.Phys. 68, 6191 (1990).
4. O.Holland, J.Budai, and B.Nielsen, Mat.Sci.Eng. A253, 240 (1998).
5. B.Nielsen, O.Holland, T.Leung, and K.Lynn, J.Appl.Phys. 74, 1636 (1993).
6. K.Winterbon, Rad.Eff. 46, 181 (1980).
7. L.Shao, X.Wang, J.Liu, J.Bennett, L.Larsen, and W.Chu, J.Appl.Phys. 92, 4307 (2002).
8. O.W.Holland and C.W.White, Nucl.Inst.Meth.Phys.Res. B59/60, 353 (1991).
9. V.Raineri, R.Schreutelkamp, F.Saris, K.Janssen, and R.Kaim, Appl.Phys.Lett. 58, 4, 922 (1991).
10. S.Saito, K.Hamada, and A.Mineji, Nucl.Inst.Meth.Phys.Res. B 120, 37 (1996).
11. E.Roth, O.Holland, V.Venezia, and B.Nielsen, J.Elec.Mat. 26, 11, 1349 (1997).
12. V.Venezia, T.Haynes, A.Agarwal, L.Pelaz, H.-J Gossmann, D.Jacobson, and D.Eaglesham, Appl.Phys.Lett. 74, 9, 1299 (1999).
13. D.Eaglesham, T.Haynes, H.-J Gossmann, D.Jacobson, and P.Stolk, Appl.Phys.Lett. 70, 24, 3281 (1997).
14. Lin Shao, X.lu, X.Wang, I.Rusakova, J.Liu, and W.Chu, Appl.Phys.Lett. 78, 16, 2321 (2001).
15. W.Chu, J.Liu, Lin Shao, X.Wang, and P.Ling, Nucl.Inst.Meth.Phys.Res. B 190, 34 (2002).
16. Lin Shao, J.Liu, X.Wang, H.Chen, P.Thomson, and W.Chu, Nucl.Inst.Meth.Phys.Res. B 206, 413 (2003).
17. Lin Shao, P.Thomson, P.van der Heide, S.Patel, Q.Chen, X.Wang, H.Chen, J.Liu, and W.Chu, Extended Abstracts, 59 (2003).
18. A.Nejim and B.Sealy, Semicond.Sci.Tech. 18, 839 (2003).
19. R.Kalyanaraman, V.Venezia, L.Pelaz, T.Haynes, H.-J Gossmann, and C.Rafferty, Appl.Phys.Lett. 82, 2, 215 (2003).
20. Lin Shao, J.Zhang, J.Chen, D.Tang, P.Thomson, S.Patel, X.Wang, H.Chen, J.Liu, and W.Chu, Appl.Phys.Lett. 84, 3325 (2004).
21. V.Skuratov, N.Dinu, I.Antonova, and V.Obodnikov, Sur.Eng.Sur.Ins.Vac.Tec. 63, 571 (2001).
22. R.Webb, Monte Carlo Simulator of Ions in Solids, Cascade, IBC, University of Surrey (2005).
23. A.J.Smith, B.Colombeau, R.Gwilliam, E.Collart, N.Cowern, and B.Sealy, Mat.Res.Soc.Symp.Proc. 810, C3.8.1 (2004).
24. A.J.Smith, B.Colombeau, N.Bennett, R.Gwilliam, N.Cowern, and B.Sealy, Mat.Res.Soc.Symp.Proc. 864, E7.1 (2005).
25. R.Gwilliam, N.Cowern, B.Colombeau, B.Sealy, and A.Smith, CAARI2006 Proceedings: Fortworth (2006).
26. M.Giles, J.Electrochem.Soc. 138, 1160 (1991).
27. N.Cowern, A.J.Smith, B.Colombeau, R.Gwilliam, B.Sealy, and E.Collart, IEDM Tech.Digest 2005 (IEE, Piscataway, NJ), 39.1.1 (2005).
28. A.J.Smith, N.Cowern, R.Gwilliam, B.Sealy, B.Colombeau, E.Collart, S.Gennaro, D.Giubertoni, M.Bersani, and M.Barozzi, Appl.Phys.Lett. 88, 082112 (2006).
29. A.Smith, B.Colombeau, R.Gwilliam, N.Cowern, B.Sealy, M.Milosavljevic, E.Collart, S.Gennaro, M.Bersani, and M.Barozzi, Mat.Sci.Eng.B. 124-125, 210 (2005).
30. M.El-Ghor, O.Holland, C.White, and S.Pennycook, J.Mater.Res 5, 352 (1990).
31. S.Mirabella, E.Bruno, F.Priolo, D.De Salvador, E.Napolitani, A.Drigo, and A.Carnera, Appl.Phys.Lett. 83, 680 (2003).