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Volumn 61, Issue 20, 2000, Pages 13710-13720

Semiconductor surface diffusion: Nonthermal effects of photon illumination

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EID: 0001464831     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.61.13710     Document Type: Article
Times cited : (49)

References (58)
  • 10
    • 36549099473 scopus 로고
    • This mechanism operates only for lightly doped substrates or high illumination intensities, where the photogenerated charge carrier density greatly exceeds the thermal density. See E. G. Seebauer, J. Appl. Phys. 66, 4963 (1989) for an example.
    • (1989) J. Appl. Phys. , vol.66 , pp. 4963
    • Seebauer, E.1
  • 23
    • 0003597024 scopus 로고
    • P. J. Dobsen, Properties of Silicon (INSPEC, The Institution of Electrical Engineers, New York, 1988), p. 849.
    • (1988) Properties of Silicon , pp. 849
    • Dobsen, P.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.