Germanium effect on oxygen-related defects in Czochralski silicon

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 4, 2006, Pages 685-695

  Yang, Deren ^a   Chen, Jiahe ^a   Li, Hong ^a   Ma, Xiangyang ^a   Tian, Daxi ^a   Li, Liben ^a   Que, Duanlin ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

INTERNAL GETTERING (IG) ABILITY; NEW DONORS (NDS); THERMAL CYCLES; THERMAL DONORS (TDS);

DOPING (ADDITIVES); GERMANIUM; GROWTH (MATERIALS); OXYGEN; SILICON;

DEFECTS;

EID: 33645335205     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200564507     Document Type: Conference Paper

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