Ultra shallow P+/N junctions using plasma immersion ion implantation and laser annealing for sub 0.1 μm CMOS devices

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 18-24

  Torregrosa, Frank ^a   Laviron, Cyrille ^b   Milesi, Frédéric ^a   Hernandez, Miguel ^c   Faïk, Hasna ^a   Venturini, Julien ^c  

^a Ion Beam Services   (France)

^b CEA LETI   (France)

^c SOPRA   (France)

Author keywords

Laser thermal processing; Plasma based ion implantation and deposition; Ultra shallow junctions

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; LASER APPLICATIONS; PLASMAS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

ENERGY DENSITY; LASER THERMAL PROCESSING; PLASMA BASED ION IMPLANTATION AND DEPOSITION; ULTRA SHALLOW JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 23444456789     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.04.108     Document Type: Conference Paper

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