Implant annealing - An evolution from soak over spike to millisecond annealing

Materials Science Forum

Volumn 573-574, Issue , 2008, Pages 207-228

  Paul, Silke ^a   Lerch, Wilfried ^a  

^a MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

Gaseous ambient; Implant annealing; Ms anneal; Pre stabilization; RTP; Soak anneal; Solid phase epitaxial regrowth (SPER); Spike anneal; Ultra shallow junction

Indexed keywords

ALUMINUM NITRIDE; RAPID THERMAL PROCESSING; SEMICONDUCTOR JUNCTIONS; STABILIZATION;

GASEOUS AMBIENT; IMPLANT ANNEALING; PRE-STABILIZATION; SOLID PHASE EPITAXIAL REGROWTH; SPIKE ANNEAL; ULTRA SHALLOW JUNCTION;

RAPID THERMAL ANNEALING;

EID: 45749106745     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.573-574.207     Document Type: Article

References (63)

1. th Int. Conf. on Advanced Thermal Processing of Semiconductors - RTP'99, Colorado Springs, CO, ISBN0-9638251-5-1, (1999), pp. 292-317.
2. K. Nishiyama, M. Arai and N. Watanabe: Jpn. J. Appl. Phys. Vol. 19(10) (1980), pp. L563-L566.
3. A.E. Michel, W. Rausch, P.A. Ronsheim and R.H. Kastl: Appl. Phys. Lett. 50 (7) (1987), pp. 416-418.
4. D.F. Downey, J.W. Chow, W. Lerch, J. Niess and S.D. Marcus: Mat. Res. Soc. Symp. Proc., Vol. 525 (1998), pp. 263-271.
5. W. Lerch, M. Glück, N.A. Stolwijk, H. Walk, M. Schäfer, S.D. Marcus, D.F. Downey and J.W. Chow: J. Electrochem. Soc. Vol. 146 (7) (1999), p. 2670-2678.
6. A. Agarwal, D.J. Eagelsham, H.J. Gossmann, L. Pelaz, S.B. Hemer, D.C. Jacobson, T.E. Haynes, Y. Erokin and R. Simonton: IEDM Tech. Dig. (1997), pp. 467-470.
7. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP'97, New Orleans, LA, ISBN 0-9638251-5-1 (1997), pp. 35-43.
8. W. Lerch, N.A. Stolwijk, S.D. Marcus, D.F. Downey and M. Schäfer: Electrochem. Soc. Proc. Vol. 99-10 (1999), pp. 141-150.
9. S. Shishiguchi, A. Mineji, T. Hayashi and S. Saito: VLSI Tech. Symp. Dig. Tech. Papers (1997), p. 89-90.
10. A. Tillmann, U. Kreiser, P. Munzinger, S. Frigge, S. Buschbaum, P. Schmid, D. Loeffelmacher, M. Merkwitz and T. Theilig: J. Elec. Mat. Vol. 27(12) (1998), pp. 1278-1284.
11. th Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP'98, Kyoto, Japan, ISBN 0-9638251 -7-8, (1998), p. 53-61.
12. M.A. Foad and D. Jennings: Solid State Technology Vol. 12 (1998), pp. 43-54.
13. D.F. Downey, S.D. Marcus and J.W. Chow: J. Elec. Mat. Vol. 27(12) (1998), pp. 1296-1314.
14. th Int. Conf. on Advanced Thermal Processing of Semiconductors- RTP'99, Colorado Springs, CO, ISBN0-9638251-5-1, (1999), pp.229-236.
15. D.F. Downey, S.W.Falk, A.F.Bertuch and S.D.Marcus: J. Elec. Mat. Vol. 28(12) (1999), p. 1340.
16. C.Y. Chang and S.M. Sze: ULSI Technology (McGraw Hill, 1996).
17. D.F. Downey and K.S.Jones: Proc. XIIth International Conference on Ion Implantation Technology - IIT 1998, Kyoto, Japan, ed. by J. Matsuo, G. Takaoka, I. Yamada, IEEE 1998, p. 897.
18. Z. Nenyei, H. Walk and T. Knarr: J. Electrochem. Soc. Vol. 140(6) (1993), p. 1728.
19. B. Bayha, S. Paul, W. Lerch, D.F. Downey, E.A. Arevalo, X. Hebras and N. Cherkashin: Proc. XIVth International Conference on Ion Implantation Technology - IIT 2002, Taos, NM, ed. by B. Brown, T.L. Alford, M. Nastasi, M.C Vella, IEEE 2002, pp. 618-621.
20. F. Cristiano, X. Hebras, N. Cherkashin, A. Claverie, W. Lerch and S. Paul: Appl. Phys. Lett. Vol. 83(26) (2003), pp. 5407-5409.
21. A. Claverie, F. Cristiano, B. Colombeau, E. Scheid and B. de Mauduit: Proc. XIVth International Conference on Ion Implantation Technology - IIT 2002, Taos, NM, ed. by B. Brown, T.L. Alford, M. Nastasi, M.C. Vella, IEEE 2002, pp. 538-543.
22. A. Claverie, B. Colombeau, B. de Mauduit, C. Bonafos, X. Hebras, G. B. Assayag and F. Cristiano: Appl. Phys. A Vol. 76 (2003), p. 1025.
23. T. Matsuda, S. Shishiguchi and H. Kitajima: Jpn. J. Appl. Phys. Vol. 41 (2002), pp. 451-457.
24. W. Lerch, B. Bayha, D.F. Downey and E.A. Arevalo: Electrochem. Soc. Proc Vol. 2001-9 (2001), pp. 321-336.
25. A. Jain: Electrochem. Soc. Proc. Vol. 2000-9 (2000), p. 33.
26. W. Skorupa, T. Gebel, R.A. Yankov, S. Paul, W. Lerch, D.F. Downey and E.A. Arevalo: J. Electrochem. Soc. Vol. 152 (2005), p. G 436.
27. J.C. Gelpey, S. McCoy, D. Camm and W. Lerch: Chapter 4 of this book.
28. th Int. Conf. on Advanced Thermal Processing of Semiconductors - RTP'99, Colorado Springs, CO, ISBNO-9638251-5-1, (1999), pp. 273-280.
29. A.T. Fiory, K.K. Bourdelle, M.E. Lefrancois, D.M. Camm and A. Agarwal: Electrochem. Soc. Proc. Vol. 99-10 (1999), pp. 133-140.
30. A.T. Fiory and K.K. Bourdelle: Appl. Phys. Lett. Vol. 74(18) (1999), p. 2658.
31. S. Paul, W. Lerch, X. Hebras, N. Cherkashin and F. Cristiano: Mat. Res. Soc. Symp. Proc. Vol. 810 (2004), pp. 215-221.
32. W. Lerch, S. Paul, J. Niess, F. Cristiano, Y. Lamrani, P. Calvo, N. Cherkashin, D.F. Downey and E.A. Arevalo: Electrochem. Soc. Proc. Vol. 2004-01 (2004), p. 90.
33. B.J. Pawlak, R. Surdeanu, B. Colombeau, A. J. Smith, N. E. B. Cowern, R. Lindsay, W. Vandervorst, B. Brijs, O. Richard and F. Cristiano: Appl. Phys. Lett. Vol. 84(12) (2004), p. 2055-2057.
34. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraíz, J.M. Poate, H.S. Luftman and T.E. Haynes: J. Appl. Phys. Vol. 81(9) (1997), p. 6031.
35. S. Paul, W. Lerch and D. Bolze: Proc. XVIth International Conference on Ion Implantation Technology - IIT 2006, Marseille, France, ed. by K.J. Kirkby, R. Gwilliam, A. Smith, D. Chivers, IEEE 2006, pp. 109-112.
36. P. Pichler: "Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon", edited by S. Selberherr, (Wien, Springer, 2004).
37. H. Graoui, M. Hilkene, B. McComb, M. Castle, S. Felch, N.E.B. Cowern, A. Al-Bayati, A. Tjandra, and M.A. Foad: Mat. Res. Soc. Symp. Proc. Vol. 810 (2004), pp. 247-252.
38. S. Paul, W. Lerch, B. Colombeau, N.E.B. Cowern, F. Cristiano, S. Boninelli and D. Bolze: J. Vac. Sci. Technol. B Vol. 24(1) (2006), pp. 437-441.
39. N.E.B. Cowern, B. Colombeau, J. Benson, A.J. Smith, W. Lerch, S. Paul, T. Graf, F. Cristiano, X. Hebras and D. Bolze: Appl. Phys. Lett. Vol. 86 (2005), p. 101905.
40. M. Diebel, S. Chakravarthi, S.T. Dunham, C.F. Machala, S. Ekbote and A. Jain: Mat. Res. Soc. Symp. Proc Vol. 765 (2003), pp. D6.15.1-6.
41. G.L. Olson, J.A. Roth, L.D. Hess and J. Narayan in: Layer Structures and Interface Kinetics, ed. by S. Furukawa, (KTK Scientific, Tokyo, 1985), pp. 73-98.
42. B.J. Pawlak, T. Janssens, B. Brijs, W. Vandervorst, E.J.H. Collart, S.B. Felch and N.E.B. Cowern: Appl. Phys. Lett. Vol. 89 (2006), p. 062110.
43. B.J. Pawlak, R. Duffy, T. Janssens, W. Vandervorst, S.B. Felch, E.J.H. Collart and N.E.B. Cowern: Appl. Phys. Lett. Vol. 89 (2006), p. 062102.
44. B.L. Crowder: J. Electrochem. Soc.Vol. 117(6) (1970), pp. 671-674.
45. B.L. Crowder: J. Electrochem. Soc. Vol. 118(6) (1971), pp. 943-952.
46. K. Tsui, K. Takeuchi and T. Mogami: IEDM Tech. Dig. (1999), pp. 9-10.
47. H. Shimada, I. Ohshima, S.-I. Nakao, M. Nakagawa, K. Kanemoto, M. Hirayama, S. Sugawa and T. Ohmi: IEDM Tech.Dig. (2001), pp. 67-68.
48. Y.C. Yeo, V. Subramanian, J. Kedzierski, P. Xuan, T.-J. King, J. Bokor and C. Hu: International Semiconductor Device Research Symposium, Charlottesville, VA (1999), p. 295.
49. J.O. Borland, T. Matsuda and K. Sakamoto: Solid State Technology Vol. 6 (2002).
50. R. El Farhane, C. Laviron, F. Cristiano, N. Cherkashin, P. Morin, M. Juhel, P. Stolk, F. Arnaud, A. Pouydebasque, F. Wacquant, D. Lenoble and A. Halimaou: Mat. Res. Soc. Symp. Proc. Vol. 810 (2004), pp. 21-27
51. W. Lerch, S. Paul, D.F. Downey and E.A. Arevalo: Electrochem. Soc. Proc. Vol. 2003-14 (2003), pp. 43-49
52. W. Lerch, S. Paul, J. Niess, F. Cristiano, Y. Lamrani, P. Calvo, N. Cherkashin, D.F. Downey, and E.A. Arevalo: Electrochem. Soc. Proc. Vol. 2004-01 (2004), pp. 90-105
53. E. Landi, S. Guimares and S. Solmi, Appl. Phys. A Vol. 4 (1987), pp. 135-141
54. R. Lindsay, B.J. Pawlak, P. Stolk and K. Maex: Mat. Res. Soc. Symp. Proc. Vol. 717 (2002), C2.1.1-12
55. M. Aboy, L. Pelaz, L.A. Marques, J. Barbolla, A. Mokhberi, Y. Takamura, P.B. Griffin and J.D. Plummer: Appl. Phys. Lett. Vol. 83 (2003), p. 4166
56. F. Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, N. Cherkashin, O. Marcelot, A. Claverie, W. Lerch, S. Paul and N.E.B. Cowern: Nucl. Instr. and Methods in Phys. Res. B Vol. 253 (2006), p. 68
57. J.C. Gelpey, K. Elliott, D. Camm, S. McCoy, J. Ross, D.F. Downey and E.A. Arevalo: Electrochem. Soc. Proc. 2002-11 (2002), pp. 313-324
58. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP2004, Portland, OR, ISBN 0-7803-8477-6, (2004), pp. 99-108
59. W. Lerch, S. Paul, J. Niess, S. McCoy, T. Selinger, J. Gelpey, F. Cristiano, F. Severac, S. Boninelli and P. Pichler: Mat. Sci. and Eng. B Vol. 124-125 (2005), p. 24
60. W. Lerch, S. Paul, J. Niess, S. McCoy, J. Gelpey, D. Bolze, F. Cristiano, F. Severac, P.F. Fazzini, A. Martinez and P. Pichler: 15 IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors (RTP2007), Catania, Italy, ISBN 1-4244-1227-7, (2007), p. 191
61. th IEEE Intl. Conf. on Advanced Thermal Processing of Semiconductors - RTP 2006, Kyoto, Japan, ISBN 1-4244-0648-X, (2006), p. 73
62. T. Feudel, B. Bayha, G. Burbach, M. Gerhardt, L. Herrmann, M. Herden, T. Mantei, E. Ehrichs and D. Greenlaw, M. Horstmann: ECS Trans. Vol. 6(1) (2007), p. 373
63. K. Suguro, T. Ito, K. Nishinohara, K. Matsuo, T. Iinuma, H. Itokawa and Y. Kawase: Electrochem. Soc. Proc. Vol. 2004-01 (2004), pp. 39-49