Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Kwok, Charlotte T M ^a   Braatz, Richard D ^a   Paul, Silke ^b   Lerch, Wilfried ^b   Seebauer, Edmund G ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b MATTSON THERMAL PRODUCTS GMBH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; BORON IN SILICONS; CONCENTRATION OF; ELECTRICAL ACTIVATIONS; EMPIRICAL DATUM; FLASH LAMPS; IMPLANTATION-INDUCED DAMAGES; INTERSTITIAL CLUSTERS; INTERSTITIALS; MILLISECOND ANNEALING; NUMERICAL SIMULATIONS; PHYSICAL MECHANISMS; TRANSISTOR JUNCTIONS;

BORON; BORON COMPOUNDS; CHEMICAL ACTIVATION; DOPING (ADDITIVES); ION BOMBARDMENT; ION IMPLANTATION; LIGHTING; NONMETALS; SIMULATED ANNEALING;

RAPID THERMAL ANNEALING;

EID: 63749090428     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3079524     Document Type: Article

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