Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 267-272

  Gossmann, Hans Joachim L ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUBMICRON REGIME; DOPANT PLACEMENT; HIGH-PERFORMANCE LOGIC TECHNOLOGY; IMPLANT ENERGIES;

ACTIVATION ENERGY; ION IMPLANTATION; MOLECULAR DYNAMICS; PLASMAS; RAPID THERMAL ANNEALING;

HETEROJUNCTIONS;

EID: 38849108239     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2794741     Document Type: Article

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