Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

Applied Physics Letters

Volumn 73, Issue 4, 1998, Pages 481-483

  Sakai, Akira ^a   Sunakawa, Haruo ^a   Usui, Akira ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000063696     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121907     Document Type: Article

References (6)

1. C. Sasaoka, H. Sunakawa, A. Kimura, M. Nido, A. Usui, and A. Sakai, in Proceedings of The Second International Conference on Nitride Semiconductors, Tokushima, Japan, October 1997 (The Japan Society of Applied Physics, Tokyo, 1997); pp. 452-454;
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, Jpn. J. Appl. Phys., Part 2 36, L1568 (1997).
3. A. Usui, H. Sunakawa, A. Sakai, and A. A. Yamaguchi, Jpn. J. Appl. Phys., Part 2 36, L899 (1997).
4. O. H. Nam, M. D. Bremser, T. S. Zheleva, and R. F. Davis, Appl. Phys. Lett. 71, 2638 (1997).
5. A. Sakai, H. Sunakawa, and A. Usui, Appl. Phys. Lett. 71, 2259 (1997).
6. J. P. Hirth and J. Lothe, Theory of Dislocations (Krieger, Florida, 1992).