-
2
-
-
0034826680
-
Energetics and diffusivity of atomic boron in silicon by density-functional-based tight-binding simulations
-
Alippi P, Colombo L, Ruggerone P. Energetics and diffusivity of atomic boron in silicon by density-functional-based tight-binding simulations. Comp. Materials Sci. 2001;22:44-48.
-
(2001)
Comp. Materials Sci.
, vol.22
, pp. 44-48
-
-
Alippi, P.1
Colombo, L.2
Ruggerone, P.3
-
3
-
-
0035881399
-
Atomic-scale characterization of boron diffusion in silicon
-
Alippi P, Colombo L, Ruggerone P, Sieck A, Seifert G, Frauenheim T. Atomic-scale characterization of boron diffusion in silicon. Phys. Rev. B. 2001;64:075207.
-
(2001)
Phys. Rev. B
, vol.64
, pp. 075207
-
-
Alippi, P.1
Colombo, L.2
Ruggerone, P.3
Sieck, A.4
Seifert, G.5
Frauenheim, T.6
-
6
-
-
0032663593
-
Atomistic simulations of damage evolution in silicon
-
Gossmann H-J, Haynes T, Larsen AN, Law M, Odanaka S, eds. Pittsburgh, PA: MRS Proceedings
-
Bunea MM, Fastenko P, Dunham ST. Atomistic simulations of damage evolution in silicon. In: Gossmann H-J, Haynes T, Larsen AN, Law M, Odanaka S, eds. Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions. Vol 568. Pittsburgh, PA: MRS Proceedings; 1999:135.
-
(1999)
Si Front-End Processing - Physics and Technology of Dopant-Defect Interactions
, vol.568
, pp. 135
-
-
Bunea, M.M.1
Fastenko, P.2
Dunham, S.T.3
-
7
-
-
0035307555
-
A simple continuum model for boron clustering based on atomistic calculations
-
Chakravarthi S, Dunham ST. A simple continuum model for boron clustering based on atomistic calculations. J. of Appl. Physics. 2001:89:3650-3655.
-
(2001)
J. of Appl. Physics
, vol.89
, pp. 3650-3655
-
-
Chakravarthi, S.1
Dunham, S.T.2
-
12
-
-
0029408147
-
Dopants, defects and diffusion
-
Eaglesham D. Dopants, defects and diffusion. Physics World. 1995;8:41-45.
-
(1995)
Physics World
, vol.8
, pp. 41-45
-
-
Eaglesham, D.1
-
14
-
-
0035880338
-
Vacancy formation energy of silicon determined by a new quenching method
-
Fukata N, Kasuya A, Suezawa M. Vacancy formation energy of silicon determined by a new quenching method. Japanese J. of Appl. Physics. 2001;40:L854-L856.
-
(2001)
Japanese J. of Appl. Physics
, vol.40
-
-
Fukata, N.1
Kasuya, A.2
Suezawa, M.3
-
16
-
-
0000016244
-
First-principles calculations of interstitial boron in silicon
-
Hakala M, Puska MJ, Nieminen RM. First-principles calculations of interstitial boron in silicon. Phys. Rev. B. 2000;61:8155-8161.
-
(2000)
Phys. Rev. B
, vol.61
, pp. 8155-8161
-
-
Hakala, M.1
Puska, M.J.2
Nieminen, R.M.3
-
18
-
-
0027626918
-
A model for boron short time annealing after ion implantation
-
Hane M, Matsumoto H. A model for boron short time annealing after ion implantation. IEEE Trans. on Electron Devices. 1993;40:1215-1222.
-
(1993)
IEEE Trans. on Electron Devices
, vol.40
, pp. 1215-1222
-
-
Hane, M.1
Matsumoto, H.2
-
19
-
-
0042549146
-
Diffusion and carrier recombination by interstitials in silicon
-
Harrison WA. Diffusion and carrier recombination by interstitials in silicon. Phys. Rev. B. 1998;57:9727-9735.
-
(1998)
Phys. Rev. B
, vol.57
, pp. 9727-9735
-
-
Harrison, W.A.1
-
20
-
-
0005011336
-
Simulation of transient boron diffusion during rapid thermal annealing in silicon
-
Heinrich M, Budil M, Pötzl HW. Simulation of transient boron diffusion during rapid thermal annealing in silicon. J. of Appl. Physics. 1991;69:8133-8138.
-
(1991)
J. of Appl. Physics
, vol.69
, pp. 8133-8138
-
-
Heinrich, M.1
Budil, M.2
Pötzl, H.W.3
-
22
-
-
0003406742
-
-
New York: Wiley
-
th ed. New York: Wiley; 1996:543.
-
(1996)
th Ed.
, pp. 543
-
-
Kittel, C.1
-
23
-
-
0004092136
-
-
Vienna, Austria: Vienna University of Technology
-
Kresse G, Furthmüller J. VASP the Guide. Vienna, Austria: Vienna University of Technology; 1999.
-
(1999)
VASP the Guide
-
-
Kresse, G.1
Furthmüller, J.2
-
24
-
-
0004165224
-
-
New York: Harper & Row
-
rd ed. New York: Harper & Row; 1987:212.
-
(1987)
rd Ed.
, pp. 212
-
-
Laidler, K.J.1
-
26
-
-
0000659110
-
First-principles study of self-interstitial diffusion mechanisms in silicon
-
Lee W-C, Lee S-G, Chang KJ. First-principles study of self-interstitial diffusion mechanisms in silicon. J. of Physics: Condensed Matter. 1998;10:995-1002.
-
(1998)
J. of Physics: Condensed Matter
, vol.10
, pp. 995-1002
-
-
Lee, W.-C.1
Lee, S.-G.2
Chang, K.J.3
-
27
-
-
3342965087
-
Calculations of silicon self-interstitial defects
-
Leung W-K, Needs RJ, Rajagopal G, Itoh S, Ihara S. Calculations of silicon self-interstitial defects. Phys. Rev. Lett. 1999;83:2351-2354.
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 2351-2354
-
-
Leung, W.-K.1
Needs, R.J.2
Rajagopal, G.3
Itoh, S.4
Ihara, S.5
-
28
-
-
0035690529
-
Quantum monte carlo study of silicon self-interstitial defects
-
Leung W-K, Needs RJ, Rajagopal G, Itoh S, Ihara S. Quantum monte carlo study of silicon self-interstitial defects. VLSI Design. 2001;13:229-235.
-
(2001)
VLSI Design
, vol.13
, pp. 229-235
-
-
Leung, W.-K.1
Needs, R.J.2
Rajagopal, G.3
Itoh, S.4
Ihara, S.5
-
29
-
-
0000195444
-
Enhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena
-
Morehead FF, Lever RF. Enhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomena. Appl. Physics Lett. 1986;48:151-153.
-
(1986)
Appl. Physics Lett.
, vol.48
, pp. 151-153
-
-
Morehead, F.F.1
Lever, R.F.2
-
30
-
-
0001046248
-
Model for defect-impurity pair diffusion in silicon
-
Mulvaney BJ, Richardson WB. Model for defect-impurity pair diffusion in silicon. Appl. Physics Lett. 1987;51:1439-1441.
-
(1987)
Appl. Physics Lett.
, vol.51
, pp. 1439-1441
-
-
Mulvaney, B.J.1
Richardson, W.B.2
-
31
-
-
0001054997
-
The effect of concentration-dependent defect recombination reactions on phosphorus diffusion in silicon
-
Mulvaney BJ, Richardson WB. The effect of concentration-dependent defect recombination reactions on phosphorus diffusion in silicon. J. of Appl. Physics. 1990;67:3197-3199.
-
(1990)
J. of Appl. Physics
, vol.67
, pp. 3197-3199
-
-
Mulvaney, B.J.1
Richardson, W.B.2
-
34
-
-
0007010027
-
Unified model for impurity diffusion in silicon
-
Orlowski M. Unified model for impurity diffusion in silicon. Appl. Physics Lett. 1988;53:1323-1325.
-
(1988)
Appl. Physics Lett.
, vol.53
, pp. 1323-1325
-
-
Orlowski, M.1
-
35
-
-
0001282491
-
B diffusion and clustering in ion implanted Si: The role of B cluster precursors
-
Pelaz L, Jaraiz M, Gilmer GH et al. B diffusion and clustering in ion implanted Si: The role of B cluster precursors. Appl. Physics Lett. 1997;70:2285-2287.
-
(1997)
Appl. Physics Lett.
, vol.70
, pp. 2285-2287
-
-
Pelaz, L.1
Jaraiz, M.2
Gilmer, G.H.3
-
36
-
-
0000595313
-
Simulation of cluster evaporation and transient enhanced diffusion in silicon
-
Rafferty CS, Gilmer GH, Jaraiz M, Eaglesham D, Gossmann H-J. Simulation of cluster evaporation and transient enhanced diffusion in silicon. Appl. Physics Lett. 1996;68:2395-2397.
-
(1996)
Appl. Physics Lett.
, vol.68
, pp. 2395-2397
-
-
Rafferty, C.S.1
Gilmer, G.H.2
Jaraiz, M.3
Eaglesham, D.4
Gossmann, H.-J.5
-
37
-
-
0001739179
-
Mechanism of boron diffusion in silicon: An ab initio and kinetic monte carlo study
-
Sadigh B, Lenosky TJ, Theiss SK, Caturla M-J, de la Rubia TD, Foad MA. Mechanism of boron diffusion in silicon: An ab initio and kinetic monte carlo study. Phys. Rev. Lett. 1999;83:4341-4344.
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 4341-4344
-
-
Sadigh, B.1
Lenosky, T.J.2
Theiss, S.K.3
Caturla, M.-J.4
De La Rubia, T.D.5
Foad, M.A.6
-
38
-
-
0037988124
-
Surface diffusion of adsorbates on metals, alloys, oxides, and semiconductors
-
Bonzel HP, ed. New York: Springer Verlag
-
Seebauer EG, Jung MYL. Surface diffusion of adsorbates on metals, alloys, oxides, and semiconductors. In: Bonzel HP, ed. Landolt-Börnstein Numerical Data and Functional Relationships: Adsorbed Layers on Surfaces. Vol III/42A. New York: Springer Verlag; 2001.
-
(2001)
Landolt-Börnstein Numerical Data and Functional Relationships: Adsorbed Layers on Surfaces
, vol.3
, Issue.42 A
-
-
Seebauer, E.G.1
Jung, M.Y.L.2
-
40
-
-
0001051163
-
Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes
-
Tang M, Colombo L, Zhu J, de la Rubia TD. Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes. Phys. Rev. B. 1997;55:14279-14289.
-
(1997)
Phys. Rev. B
, vol.55
, pp. 14279-14289
-
-
Tang, M.1
Colombo, L.2
Zhu, J.3
De La Rubia, T.D.4
-
41
-
-
84923930048
-
Theory of the B interstitial related defect in Si
-
Tarnow E. Theory of the B interstitial related defect in Si. Europhysics Letters. 1991;16:449-454.
-
(1991)
Europhysics Letters
, vol.16
, pp. 449-454
-
-
Tarnow, E.1
-
42
-
-
0001474531
-
Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si
-
Van Vechten JA. Divacancy binding enthalpy and contribution of divacancies to self-diffusion in Si. Phys Rev B. 1986;33:2674-2689.
-
(1986)
Phys. Rev. B
, vol.33
, pp. 2674-2689
-
-
Van Vechten, J.A.1
-
43
-
-
0001339535
-
Activation enthalpy of recombination-enhanced vacancy migration in Si
-
Van Vechten JA. Activation enthalpy of recombination-enhanced vacancy migration in Si. Phys. Rev. B-Condensed Matter. 1988;38:9913-9919.
-
(1988)
Phys. Rev. B-Condensed Matter
, vol.38
, pp. 9913-9919
-
-
Van Vechten, J.A.1
-
44
-
-
0001669864
-
Entropy of ionisation and temperature variation of ionisation levels of defects in semiconductors
-
Van Vechten JA, Thurmond CD. Entropy of ionisation and temperature variation of ionisation levels of defects in semiconductors. Phys. Rev. B (Solid State). 1976;14:3539-3550.
-
(1976)
Phys. Rev. B (Solid State)
, vol.14
, pp. 3539-3550
-
-
Van Vechten, J.A.1
Thurmond, C.D.2
-
45
-
-
0000660925
-
Modeling inactive boron during predeposition processes
-
Vandenbossche E, Baccus B. Modeling inactive boron during predeposition processes. J. of Appl. Physics. 1993;73:7322-7330.
-
(1993)
J. of Appl. Physics
, vol.73
, pp. 7322-7330
-
-
Vandenbossche, E.1
Baccus, B.2
-
46
-
-
0035801783
-
Estimating pre-exponential factors for desorption from semiconductors: Consequences for a priori process modeling
-
Wang Z, Seebauer EG. Estimating pre-exponential factors for desorption from semiconductors: Consequences for a priori process modeling. Appl. Surface Sci. 2001;181:111-120.
-
(2001)
Appl. Surface Sci.
, vol.181
, pp. 111-120
-
-
Wang, Z.1
Seebauer, E.G.2
-
47
-
-
0000605251
-
Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron
-
Watkins GD. Defects in irradiated silicon: EPR and electron-nuclear double resonance of interstitial boron. Phys. Rev. B. 1975;12:5824-5839.
-
(1975)
Phys. Rev. B
, vol.12
, pp. 5824-5839
-
-
Watkins, G.D.1
-
48
-
-
0000119981
-
An experimental estimation of silicon interstitial diffusivity
-
Wijaranakula W. An experimental estimation of silicon interstitial diffusivity. J. of Appl. Physics. 1990;67:7624-7627.
-
(1990)
J. of Appl. Physics
, vol.67
, pp. 7624-7627
-
-
Wijaranakula, W.1
-
49
-
-
0000065634
-
First-principles study of boron diffusion in silicon
-
Windl W, Bunea MM, Stumpf R, Dunham ST, Masquelier MP. First-principles study of boron diffusion in silicon. Phys. Rev. Lett. 1999;83:4345-4348.
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 4345-4348
-
-
Windl, W.1
Bunea, M.M.2
Stumpf, R.3
Dunham, S.T.4
Masquelier, M.P.5
-
51
-
-
0000971763
-
Ab initio pseudopotential calculations of dopant diffusion in Si
-
Zhu J. Ab initio pseudopotential calculations of dopant diffusion in Si. Computational Mat. Sci. 1998;12:309-318.
-
(1998)
Computational Mat. Sci.
, vol.12
, pp. 309-318
-
-
Zhu, J.1
-
52
-
-
2842521314
-
Ab initio pseudopotential calculations of B diffusion and pairing in Si
-
Zhu J, de la Rubia TD, Yang LH, Mailhiot C, Gilmer GH. Ab initio pseudopotential calculations of B diffusion and pairing in Si. Phys. Rev. B. 1996;54:4741-4747.
-
(1996)
Phys. Rev. B
, vol.54
, pp. 4741-4747
-
-
Zhu, J.1
De La Rubia, T.D.2
Yang, L.H.3
Mailhiot, C.4
Gilmer, G.H.5
-
53
-
-
16644389738
-
Vacancies in SiC: Influence of Jahn-Teller distrotions, spin effects, and crystal structure
-
Zywietz A, Furthmüller J, Bechstedt F. Vacancies in SiC: Influence of Jahn-Teller distrotions, spin effects, and crystal structure. Phys. Rev. B. 1999;59:15166-15180.
-
(1999)
Phys. Rev. B
, vol.59
, pp. 15166-15180
-
-
Zywietz, A.1
Furthmüller, J.2
Bechstedt, F.3
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